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Phase evolution in zirconia thin films prepared by pulsed laser deposition

机译:脉冲激光沉积制备氧化锆薄膜的相变

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摘要

Zirconia thin films were deposited on silicon (10 0) and quartz substrates using pulsed laser deposition. Phase formation in zirconia films was monitored as a function of substrate temperature (473-973 K) and oxygen partial pressure (0.001-1 Pa). Volume fraction of tetragonal zirconia is determined from X-ray diffraction and Raman analysis. Tetragonal volume fraction of zirconia films varies from 10 to 76% for different substrate temperature and oxygen partial pressure. Zirconia films show a good transparency in the visible region, except for the films deposited at 473 K and at 0.002 Pa. The band gap values and refractive index of the films are discussed in relation with the microstructure and phase composition of the zirconia films as well as with 8 mol% yttria stabilised zirconia films.
机译:使用脉冲激光沉积将氧化锆薄膜沉积在硅(10 0)和石英基板上。监测氧化锆膜中的相形成与底物温度(473-973 K)和氧分压(0.001-1 Pa)的关系。通过X射线衍射和拉曼分析确定四方氧化锆的体积分数。对于不同的衬底温度和氧气分压,氧化锆薄膜的四方体积分数在10%到76%之间变化。除了在473 K和0.002 Pa下沉积的薄膜外,氧化锆薄膜在可见光区域显示出良好的透明性。还讨论了薄膜的带隙值和折射率,以及氧化锆薄膜的微观结构和相组成。如8摩尔%的氧化钇稳定的氧化锆膜。

著录项

  • 来源
    《Applied Surface Science》 |2012年第12期|p.5157-5165|共9页
  • 作者单位

    Physical Metallurgy Croup, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India;

    Physical Metallurgy Croup, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India;

    Physical Metallurgy Croup, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India;

    Corrosion Science and Technology Croup, Indira Candhi Centre for Atomic Research, Kalpakkam-603102, India;

    Materials Science Croup, Indira Candhi Centre for Atomic Research, Kalpakkam-603102, India;

    Physical Metallurgy Croup, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    zirconia; pulsed laser deposition; phase transformation; crystallite size; optical properties;

    机译:氧化锆脉冲激光沉积相变微晶尺寸光学性质;

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