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首页> 外文期刊>Applied Surface Science >Photoemission studies of the surface electronic properties of L-CVD SnO_2 ultra thin films
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Photoemission studies of the surface electronic properties of L-CVD SnO_2 ultra thin films

机译：L-CVD SnO_2超薄膜表面电子性能的光发射研究

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摘要

This work presents the results of systematic X-ray photoelectron spectroscopy (XPS) and photoemission yield spectroscopy (PYS) studies of the surface electronic properties of L-CVD SnO_2 ultrathin films submitted to various technological treatments. The interface Fermi level position in the band gap E_F -E_V has been determined from XPS analysis of the Sn3d_5/_2 binding energy position. Such value of the Fermi level position was in a good agreement with the value estimated from the offset of XPS valence band. The variation of interface Fermi level position, after the various technological treatments, has been compared to the change of work function obtained by PYS. Valence band XPS spectra and PYS spectra point to the presence of two different bands of filled electronic states of the L-CVD SnO_2 thin films. The first one was localized in the upper part of valence band at the surface at about 6.0 eV below the Fermi level, whereas the second one was localized in the band gap at about 3.0eV below the Fermi level. The changes of electronic properties of the space charge layer of L-CVD SnO_2 ultrathin films submitted to different technological procedures were assigned to the observed variation of their surface chemistry, including stoichiometryonstoichiometry and to the presence of surface carbon contamination.
机译：这项工作提出了系统的X射线光电子能谱（XPS）和光发射产率光谱（PYS）研究了经过各种技术处理的L-CVD SnO_2超薄膜的表面电子性能的结果。带隙E_F -E_V中的界面费米能级位置已经根据Sn3d_5 / _2结合能位置的XPS分析确定。费米能级位置的这种值与根据XPS价带偏移估算的值非常吻合。经过各种技术处理后，界面费米能级位置的变化已与通过PYS获得的功函数的变化进行了比较。价带XPS光谱和PYS光谱指向L-CVD SnO_2薄膜的两个填充电子态的不同带。第一个位于费米能级以下约6.0 eV处的价带上部，而第二个位于费米能级以下约3.0eV的带隙中。接受不同工艺程序处理的L-CVD SnO_2超薄膜的空间电荷层的电子性质变化被认为是观察到的表面化学变化（包括化学计量/非化学计量）和表面碳污染的存在。

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