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首页> 外文期刊>Applied Surface Science >Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si_(1-x)C_x layers on Si(1 00)
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Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si_(1-x)C_x layers on Si(1 00)

机译：Si（1 00）上外延Si_（1-x）C_x层上周期性Ni-硅化物纳米接触阵列的相形成和热稳定性

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摘要

We report here on the first study of the interfacial reactions of nanoscale Ni metal dots on single-crystal Si_(1-x)C_x (100) substrates at various heat treatments. The formation of high-resistivity NiSi_2 phase was found to be more favorable for the miniature size Ni nanodots. The incorporation of C to Si substrates exhibited significant beneficial effects on improving the thermal stability of low-resistivity NiSi nanocon-tacts. The process window of low-resistivity NiSi in the Ni nanodots/Si(1-x)C_x (100) sample was greatly extended by 200-250℃ as compared to that in the Ni nanodots/Si(100) sample. The presence of C atoms is thought to lower the NiSi nanocontact/Si_(1-x)C_x interface energy and/or to block the Ni diffusion paths during high temperature annealing. For the Ni nanodots/Si_(1-x)C_x(100) sample annealed at 900℃, highly curled and tangled amorphous SiO_x nanowires with diameters of 8-20 nm were found to form. The growth process of these amorphous SiO_x nanowires could be explained by the solid-liquid-solid (SIS) mechanism.
机译：我们在这里报告有关各种热处理下单晶Si_（1-x）C_x（100）衬底上纳米级Ni金属点的界面反应的首次研究。发现高电阻率的NiSi_2相的形成对于更细小的Ni纳米点更有利。将C掺入Si衬底对改善低电阻率NiSi纳米接触的热稳定性表现出显着的有益作用。与Ni纳米点/ Si（100）样品相比，Ni纳米点/ Si（1-x）C_x（100）样品中的低电阻率NiSi的处理窗口大大扩展了200-250℃。认为C原子的存在降低了NiSi纳米接触/ Si_（1-x）C_x界面能和/或在高温退火期间阻挡了Ni的扩散路径。对于在900℃退火的Ni纳米点/ Si_（1-x）C_x（100）样品，发现形成了直径为8-20nm的高度卷曲且缠结的非晶SiO_x纳米线。这些非晶SiO_x纳米线的生长过程可以通过固液固（SIS）机理来解释。

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  • 来源
    《Applied Surface Science》 |2012年第22期|p.8713-8718|共6页
  • 作者

    S.L Cheng; Y.C. Tseng; S.W. Lee; H. Chen;

  • 作者单位

    Department of Chemical and Materials Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan, ROC;

    Department of Chemical and Materials Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan, ROC;

    Institute of Materials Science and Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan, ROC;

    Department of Chemical and Materials Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan, ROC;

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  • 正文语种 eng
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  • 关键词

    Si_(1-x)C_x; nanosphere lithography; Ni silicide; nanocontact; phase formation;

    机译：Si_（1-x）C_x;纳米球光刻;硅化镍纳米接触相形成;

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