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首页> 外文期刊>Applied Surface Science >Preparation and characterization of Cu(In,Ga)(Se,S)_2 films without selenizationby co-sputtering from Cu(In,Ga)Se_2 quaternary and In_2S_3 targets
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Preparation and characterization of Cu(In,Ga)(Se,S)_2 films without selenizationby co-sputtering from Cu(In,Ga)Se_2 quaternary and In_2S_3 targets

机译：从Cu（In，Ga）Se_2四元和In_2S_3靶共溅射制备无硒化Cu（In，Ga）（Se，S）_2薄膜并进行表征

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摘要

In this study, Cu(In,Ga)(Se,S)_2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se_2 (CIGS) quaternary alloy target and an In_2S_3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70W by radio frequency) and In_2S_3 (30W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga)<0.95, Ga/(In + Ga)<0.3, and (Se/S)≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4×10~(170cm~(-3) and mobility of 1.2 cm~2 V~(-1)s~(-1). The resulting film exhibited p-type conductivity with a double graded band-gap structure.
机译：在这项研究中，通过共溅射黄铜矿Cu（In，Ga）Se_2（CIGS），将Cu（In，Ga）（Se，S）_2（CIGSS）薄膜沉积到双层Mo涂层钠钙玻璃上四元合金靶和In_2S_3二元靶。进行了一步退火工艺以形成CIGSS黄铜矿相，而无需后硒化处理。实验结果表明，采用CIGS（射频70W）和In_2S_3（直流30W）通过建议的共溅射工艺制备了CIGSS薄膜，衬底温度为373 K，工作压力为0.67 Pa，并经过一级退火在798 K下持续30分钟。 CIGSS膜的化学计量比为Cu /（In + Ga）= 0.92，Ga /（In + Ga）= 0.26和Se /（S）= 0.49，接近器件质量化学计量比（Cu /（In + Ga） ）＜0.95，Ga /（In + Ga）＜0.3，和（Se / S）≈0.5）。样品的电阻率为14.8Ωcm，载流子浓度为3.4×10〜（170cm〜（-3），迁移率为1.2 cm〜2 V〜（-1）s〜（-1）。具有双级带隙结构的p型导电性。

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  • 来源
    《Applied Surface Science》 |2011年第9期|p.4278-4284|共7页
  • 作者

    Y.C. Lin; J.H. Ke; W.T. Yen; S.C. Liang; C.H. Wu; C.T. Chiang;

  • 作者单位

    Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan;

    Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan;

    Materials and Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, No. 15, Shi Qi Zi, Cooping Village, Longtan Township, Taoyuan County, Taiwan;

    Materials and Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, No. 15, Shi Qi Zi, Cooping Village, Longtan Township, Taoyuan County, Taiwan;

    Materials and Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, No. 15, Shi Qi Zi, Cooping Village, Longtan Township, Taoyuan County, Taiwan;

    Materials and Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, No. 15, Shi Qi Zi, Cooping Village, Longtan Township, Taoyuan County, Taiwan;

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  • 关键词

    Cu(In,Ga)(Se,S)_2,Co-sputter process,One-stage annealing;

    机译：Cu（In;Ga）（Se;S）_2;共溅射工艺;一级退火;

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