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首页> 外文期刊>Applied Surface Science >Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited A1_2O_3 films on Ge substrates
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Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited A1_2O_3 films on Ge substrates

机译：化学表面处理对锗衬底上原子层沉积的Al_2_2_3薄膜界面和电学特性的影响

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摘要

The Ge surfaces were cleaned and passivated by two kinds of chemical pretreatments: conventional combination of HF+(NH_4)_2S, and new one of HBr+(NH_4)_2S.The chemical states and stability at passivated Ge surfaces were carefully characterized. The influence of chemical surface treatments on the interface and electrical properties of A1_2O_3 gate dielectric films on Ge grown by atomic layer deposition (AID) has been investigated deeply. It is found that the combination of HBr and (NH_4)_2S can remove more Ge-O bonds on the Ge surface compared to that of conventional HF and (NH_4)_2S with excellent stability. X-ray photoelectron spectroscopy (XPS) reveals that HBr and (NH_4)_2S treated Ge surface has a mixture states of GeO_x (9.25%) and GeS (7.40%) while HF and (NH_4)_2S treated Ge surface has a mixture states of GeOx_ (16.45%) and GeS (3.37%). And the Ge-S peak from the surface of Ge substrates decreases a little after the HBr and (NH_4)_2S treated Ge surface was exposed in the ambient for 300 min, which suggests the Ge surface is stable to oxidants. The Al_2O_3 films on HBr and (NH_4)_2 S treated Ge substrates exhibits better electrical properties such as large capacitance, decreased leakage current density by ~two orders of magnitude, and less C-V hysteresis. This indicates that a reduction in charge traps possibly at the interface and more interface traps are terminated by sulfur. The surface treatment of HBr and (NH_4)_2S seems to be very promising in improving the quality of high-k gate stack on Ge substrates.
机译：通过两种化学预处理对Ge表面进行清洗和钝化处理：常规的HF +（NH_4）_2S组合和新的HBr +（NH_4）_2S组合。仔细表征了钝化Ge表面的化学状态和稳定性。深入研究了化学表面处理对原子层沉积（AID）生长的Ge上Al_2O_3栅介电膜的界面和电学性能的影响。发现与传统的HF和（NH_4）_2S相比，HBr和（NH_4）_2S的结合可以去除Ge表面更多的Ge-O键。 X射线光电子能谱（XPS）显示，HBr和（NH_4）_2S处理的Ge表面的混合态为GeO_x（9.25％）和GeS（7.40％），而HF和（NH_4）_2S处理的Ge表面的混合态为GeOx_（16.45％）和GeS（3.37％）。 HBr和（NH_4）_2S处理过的Ge表面在环境中暴露300分钟后，Ge衬底表面的Ge-S峰减小了一点，这表明Ge表面对氧化剂稳定。在HBr和（NH_4）_2 S处理的Ge衬底上的Al_2O_3膜表现出更好的电性能，例如大电容，泄漏电流密度降低了大约两个数量级，并且C-V磁滞减小了。这表明可能在界面处的电荷陷阱的减少，更多的界面陷阱被硫终止。 HBr和（NH_4）_2S的表面处理对于改善Ge衬底上的高k栅堆叠的质量似乎非常有希望。

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  • 来源
    《Applied Surface Science》 |2011年第10期|p.4589-4592|共4页
  • 作者

    Xuefei Li; Aidong Li; Xiaojie Liu; Youpin Gong; Xiaochun Chen; Hui Li; Di Wu;

  • 作者单位

    National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing University, Haokou Road 22, Nan]ing210093,Jiangsu, People's Republic of China;

    National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing University, Haokou Road 22, Nan]ing210093,Jiangsu, People's Republic of China;

    National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing University, Haokou Road 22, Nan]ing210093,Jiangsu, People's Republic of China;

    National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing University, Haokou Road 22, Nan]ing210093,Jiangsu, People's Republic of China;

    National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing University, Haokou Road 22, Nan]ing210093,Jiangsu, People's Republic of China;

    National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, Nanjing University, Haokou Road 22, Nan]ing210093,Jiangsu, People's Republic of China;

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  • 关键词

    Ge substrate; Surface passivation; Hydrogen bromide; Sulfur passivation;

    机译：锗基板;表面钝化;溴化氢;硫钝化;

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