首页> 美国政府科技报告 >Structural and interfacial characteristics of thin (<10 nm) SiO(sub 2) films grown by electron cyclotron resonance plasma oxidation on (100) Si substrates.
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Structural and interfacial characteristics of thin (<10 nm) SiO(sub 2) films grown by electron cyclotron resonance plasma oxidation on (100) Si substrates.

机译:通过电子回旋共振等离子体氧化在(100)si衬底上生长的薄(<10nm)siO(sub 2)膜的结构和界面特性。

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摘要

The feasibility of fabricating ultra-thin SiO(sub 2) films on the order of a few nanometer thickness has been demonstrated. SiO(sub 2) thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma ...

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