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Electroluminescence of the p-ZnO:As-ZnO LEDs grown on ITO glass coated with GaAs interlayer

机译:在涂有GaAs夹层的ITO玻璃上生长的p-ZnO:As / n-ZnO LED的电致发光

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摘要

In this paper, we proposed a new p-type ZnO doping method with metal organic chemical vapor deposition (MOCVD) technology by inserting a GaAs interlayer between substrate and ZnO epitaxial layer. The doping concentration of p-type ZnO film is able to be controlled by adjusting the thickness of the GaAs interlayer. With this method, we fabricated n-ZnO/p-ZnO:As homojunction light-emitting diode (LED) on ITO-glass substrate pre-coated with 20 nm GaAs interlayer. The device exhibits a typical rectifying behavior by current-voltage (J-V) measurement. When the device is forward biased, UV-vis electroluminescence (EL) emissions can be observed clearly.
机译:在本文中,我们通过在衬底和ZnO外延层之间插入GaAs中间层,提出了一种采用金属有机化学气相沉积(MOCVD)技术的新型p型ZnO掺杂方法。可以通过调节GaAs中间层的厚度来控制p型ZnO膜的掺杂浓度。用这种方法,我们在预涂有20 nm GaAs夹层的ITO玻璃衬底上制造了n-ZnO / p-ZnO:As同质结发光二极管(LED)。该器件通过电流-电压(J-V)测量显示出典型的整流行为。当器件正向偏置时,可以清楚地观察到紫外可见电致发光(EL)发射。

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  • 来源
    《Applied Surface Science》 |2011年第10期|p.4685-4688|共4页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    Department of Physics, Dalian University of Technology, Dalian 116023, China;

    Department of Physics, Dalian University of Technology, Dalian 116023, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China Department of Physics, Dalian University of Technology, Dalian 116023, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO homojunction; Arsenic; Light-emitting diode; Metal organic chemical vapor deposition;

    机译:ZnO同质结;砷;发光二极管;金属有机化学气相沉积;

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