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首页> 外文期刊>Applied Surface Science >Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration
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Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

机译：直接划线配置的a-Si：H薄膜太阳能电池的UV激光选择性烧蚀

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摘要

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355 nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis, electrical measurements and confocal profiles. In order to evaluate the damage in the silicon layer, Raman spectroscopy has been used for the last laser process step. Raman spectra gives information about the heat affected zone in the amorphous silicon structure through the crystalline fraction calculation. The use of ultrafast sources, such as picoseconds lasers, coupled with UV wavelength gives the possibility to consider materials and substrates different than currently used, making the process more efficient and easy to implement in production lines. This approach with UV laser sources working from the film side offers no restriction in the choice of materials which make up the devices and the possibility to opt for opaque substrates.
机译：通过激光划片进行的硅薄膜太阳能电池模块的单片串联在这些设备的整个生产中起着非常重要的作用。在当前的激光工艺互连中，开发了最后两个步骤以配置模块，其中玻璃对于透明基板至关重要。另外，由于构成装置的多层结构的不同材料的性质，有时会迫使所使用的激光源中的波长改变。这项工作的目的是在与通常使用可见激光源进行的处理不同的配置中表征单片互连过程中涉及的激光图案。为了进行这项研究，我们使用工作在355 nm波长的纳秒和皮秒激光源，以便从薄膜一侧选择性地烧蚀材料。为了评估这种材料的选择性去除，已使用EDX（使用X射线的能量色散）分析，电测量和共焦分布图。为了评估硅层中的损伤，拉曼光谱已用于最后的激光处理步骤。拉曼光谱通过晶体分数计算得出有关非晶硅结构中热影响区的信息。使用超快光源（例如皮秒激光器）和UV波长，可以考虑使用与当前使用的材料和基材不同的材料和基材，从而使该过程更高效且更易于在生产线中实施。这种从薄膜侧使用紫外线激光源的方法在构成设备的材料选择以及选择不透明基材的可能性方面没有任何限制。

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  • 来源
    《Applied Surface Science》 |2011年第12期|p.5230-5236|共7页
  • 作者

    S. Lauzurica; J.J. Garcia-Ballesteros; M. Colina; I. Sanchez-Aniorte; C. Molpeceres;

  • 作者单位

    Centro laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3,28031 Madrid, Spain;

    Centro laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3,28031 Madrid, Spain;

    Centro laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3,28031 Madrid, Spain;

    Centro laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3,28031 Madrid, Spain;

    Centro laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3,28031 Madrid, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    laser scribing; selective ablation; a-si:h;

    机译：激光划片;选择性切除;a-si：h;

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