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首页> 外文期刊>Applied Surface Science >Surface modification of highly oriented pyrolytic graphite by reaction with atomic nitrogen at high temperatures
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Surface modification of highly oriented pyrolytic graphite by reaction with atomic nitrogen at high temperatures

机译：高温下与原子氮反应对高取向热解石墨进行表面改性

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摘要

Dry etching of {00 01} basal planes of highly oriented pyrolytic graphite (HOPG) using active nitrida-tion by nitrogen atoms was investigated at low pressures and high temperatures. The etching process produces channels at grain boundaries and pits whose shapes depend on the reaction temperature. For temperatures below 600℃, the majority of pits are nearly circular, with a small fraction of hexagonal pits with rounded edges. For temperatures above 600℃, the pits are almost exclusively hexagonal with straight edges. The Raman spectra of samples etched at 1000℃ show the D mode near 1360 cm~(-1), which is absent in pristine HOPG. For deep hexagonal pits that penetrate many graphene layers, neither the surface number density of pits nor the width of pit size distribution changes substantially with the nitri-dation time, suggesting that these pits are initiated at a fixed number of extended defects intersecting {0001} planes. Shallow pits that penetrate 1-2 graphene layers have a wide size distribution, which suggests that these pits are initiated on pristine graphene surfaces from lattice vacancies continually formed by N atoms. A similar wide size distribution of shallow hexagonal pits is observed in an n-layer graphene sample after N-atom etching.
机译：在低压和高温下，利用氮原子进行的主动氮化作用，对高取向热解石墨（HOPG）的{00 01}基面进行干法蚀刻。蚀刻工艺在晶界和凹坑处产生通道，其形状取决于反应温度。温度低于600℃时，大多数凹坑几乎是圆形的，只有一小部分的六角形凹坑带有圆形边缘。对于高于600℃的温度，这些凹坑几乎完全是六角形且带有直边。在1000℃腐蚀样品的拉曼光谱表现出1360 cm〜（-1）附近的D模态，而原始HOPG则没有。对于穿透许多石墨烯层的深六角形凹坑，凹坑的表面数目密度和凹坑尺寸分布的宽度均不会随氮化时间而显着变化，这表明这些凹坑是在与{0001}相交的固定数量的延伸缺陷处引发的飞机。穿透1-2个石墨烯层的浅凹坑具有较宽的尺寸分布，这表明这些凹坑是由N个原子连续形成的晶格空位在原始石墨烯表面上引发的。在N原子蚀刻之后，在n层石墨烯样品中观察到了类似的浅六边形凹坑宽分布。

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