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Structural, optical and electrical properties of Zn_(1-x)Cd_xO thin films prepared by PLD

机译:PLD法制备的Zn_(1-x)Cd_xO薄膜的结构,光学和电学性质

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摘要

Ternary polycrystalline Zn_(1-x)Cd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_(1-x)Cd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd contentx also leads to the broadening of the emission peak. The resistivity of Zn_(1-x)Cd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_(1-x)Cd_xO films potential candidate for optoelectronic device.
机译:通过脉冲激光沉积(PLD)技术在石英衬底上获得镉含量x在0至0.23之间的三元多晶Zn_(1-x)Cd_xO半导体薄膜。 X射线衍射测量表明,所有薄膜均为纤锌矿结构的单相纤锌矿结构,沿c轴取向生长,其c轴晶格常数随Cd含量x的增加而增加。原子显微镜观察表明,随着Cd含量x的增加,Zn_(1-x)Cd_xO薄膜的晶粒尺寸不断减小。光致发光和光学测量均显示,随着Cd含量x的增加,带隙从3.27 eV降低到2.78 eV。 Cd含量x的增加也导致了发射峰的扩大。 Zn_(1-x)Cd_xO薄膜的电阻率随着Cd含量x值的增加而明显降低。 PL发射到可见光的移动以及电阻率的降低使得Zn_(1-x)Cd_xO薄膜成为光电器件的潜在候选者。

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  • 来源
    《Applied Surface Science》 |2011年第13期|p.5657-5662|共6页
  • 作者单位

    The Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China;

    The Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China;

    The Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zn_(1-x)Cd_xO films; Pulse laser deposition; Transparent conductor oxide; Hall effect;

    机译:Zn_(1-x)Cd_xO薄膜;脉冲激光沉积;透明导体氧化物;霍尔效应;

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