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Structural and photoluminescent properties of Ni doped ZnO nanorod arrays prepared by hydrothermal method

机译:水热法制备Ni掺杂ZnO纳米棒阵列的结构和光致发光性能

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摘要

Self-assembled Ni-doped zinc oxide (Zn_(1_x)Ni_xO, x = 0.05, 0.10, 0.15, i.e., ZnNiO, nominal composition) nanorod arrays vertically grown on the ZnO seed layer covered glass along [001] direction were synthesized by hydrothermal method. Their images and structures have been characterized by scan electron microscope (SEM), X-ray diffraction (XRD) and Raman spectra, showing that Ni doping is beneficial to the formation of ZnO nanorods with hexagonal cross section and the enhancement of ZnO crystal quality. X-ray photoemission spectroscopy (XPS) study further demonstrated that Ni atoms were successfully doped into ZnO lattices. The photoluminescence (PL) spectra of ZnNiO samples show near bandedge emission (NBE) peaks at about 380 nm at a low excitation power and the NBE peak position redshifts while its intensity continuously increases with the increase of Ni doping concentration. With the excitation power increasing, the NBE peak redshifts from 380 nm to about 400 nm for ZnNiO nanorod arrays. The NBE mechanisms for ZnNiO nanorod arrays have been discussed, which is helpful for understanding their room temperature ferromagnetisms.
机译:通过水热合成在ZnO晶种层覆盖的玻璃上沿[001]方向垂直生长的自组装Ni掺杂的氧化锌(Zn_(1_x)Ni_xO,x = 0.05、0.10、0.15,即ZnNiO,标称组成)纳米棒阵列。方法。通过扫描电子显微镜(SEM),X射线衍射(XRD)和拉曼光谱对它们的图像和结构进行了表征,表明Ni掺杂有利于形成具有六边形截面的ZnO纳米棒并提高ZnO晶体质量。 X射线光电子能谱(XPS)研究进一步证明,镍原子已成功掺杂到ZnO晶格中。 ZnNiO样品的光致发光(PL)光谱显示,在低激发功率下,约380 nm处出现了近带边发射(NBE)峰,并且NBE峰位置发生红移,而其强度随Ni掺杂浓度的增加而不断增加。随着激发功率的增加,ZnNiO纳米棒阵列的NBE峰从380 nm红移到约400 nm。讨论了ZnNiO纳米棒阵列的NBE机制,这有助于理解它们的室温铁磁性。

著录项

  • 来源
    《Applied Surface Science》 |2011年第15期|p.6540-6545|共6页
  • 作者单位

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

    School of Physics and Materials Science, The Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photoluminescence; X-ray diffraction; Ni doped ZnO; Nanorod arrays;

    机译:光致发光;X射线衍射;掺镍ZnO;纳米棒阵列;

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