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Effects of homogenous loading on silicon direct bonding

机译：均匀载荷对硅直接键合的影响

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The effect of a homogenous loaded stress on the bonding quality of silicon wafer pairs was investigated by employing a Nano-Imprint System and a homogenous plane-stress applied over the entire surface area of pre-cleaned wafers. In addition, the effects of variations in the applied homogenous stress (1,10,100, 500 psi) on the interface energy of the bonded pairs were examined using a dynamic blade insertion (DBI) method. Infrared imaging was used to evaluate the quality of the bonded interface of each bonded pair immediately after the bonding process and after allowing the bonded pairs to rest at room temperature for 80 h after bonding. The results indicated that the homogenous loading with the Nano-Imprint System further improved the bonding condition of wafer pairs that had been pre-bonded using an anodic bonder. Furthermore, the bonded pairs exhibited almost identical interfacial energies of about 0.2 Jm~(-2) when the homogenous stress was varied from 1 psi to 500 psi, which clearly indicates that the interfacial energy of bonded wafers is independent of the amount of stress applied by the homogenous loading process.
机译：通过采用纳米压印系统并在预清洗晶圆的整个表面上施加均匀的平面应力，研究了均匀加载应力对硅晶圆对的键合质量的影响。此外，使用动态刀片插入（DBI）方法检查了施加的均匀应力（1,10,100，500 psi）的变化对键合对的界面能的影响。结合后立即使用红外成像，并在结合后将结合对在室温下静置80小时后，使用红外成像评估每个结合对的结合界面的质量。结果表明，纳米压印系统的均匀加载进一步改善了使用阳极键合机预键合的晶圆对的键合条件。此外，当均匀应力在1 psi至500 psi之间变化时，键合对的界面能几乎相同，约为0.2 Jm〜（-2），这清楚地表明键合晶片的界面能与施加的应力量无关通过均匀加载过程。

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