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Properties of AlN grown by plasma enhanced atomic layer deposition

机译：通过等离子体增强原子层沉积生长的AlN的性质

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摘要

The influence of growth parameters on the properties of A1N films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of 100-300℃ with plasma discharge times between 2.5 and 30 s. The A1N films were shown to be hydrogen rich having H concentrations in the range of 13-27 at.% with inverse dependence on the growth temperature. The carbon and oxygen concentrations in the films were less than 2.6% and 0.2%, respectively. The refractive index and mass density of the films correlated with the hydrogen concentration so that higher concentrations (lower growth temperatures) resulted in smaller refractive index and mass density. The film grown at 300℃ was found to be crystalline whereas lower growth temperature produced amorphous films.
机译：研究了生长参数对三甲基铝和氨前体等离子体增强原子层沉积制备的AlN薄膜性能的影响。在100〜300℃的温度范围内生长的薄膜的原子浓度，折射率，质量密度，结晶度和表面粗糙度进行了研究，等离子放电时间为2.5至30s。显示出AlN膜富含氢，其H浓度在13-27at。％的范围内，与生长温度成反比。薄膜中的碳和氧浓度分别小于2.6％和0.2％。膜的折射率和质量密度与氢浓度相关，因此较高的浓度（较低的生长温度）导致较小的折射率和质量密度。发现在300℃下生长的膜是结晶的，而较低的生长温度产生非晶膜。

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  • 来源
    《Applied Surface Science》 |2011年第17期|p.7827-7830|共4页
  • 作者

    Markus Bosund; Timo Sajavaara; Mikko Laitinen; Teppo Huhtio; Matti Putkonen; Veli-Matti Airaksinen; Harri Lipsanen;

  • 作者单位

    Department of Micro- and Nanosdences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aatto, Finland;

    Department 0/Physics, University ofjyvaskylii, P.O. Box 35 (YFL) FI-40014 University o/Jyvfiskylfi, Finland;

    Department 0/Physics, University ofjyvaskylii, P.O. Box 35 (YFL) FI-40014 University o/Jyvfiskylfi, Finland;

    Department of Micro- and Nanosdences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aatto, Finland;

    Beneq Oy, P.O. Box 262, FI-01511 Vantaa, Finland;

    Micronova Nano/abricafion Centre, Aalto University School 0/ Electrical Engineering, P.O. Box 13500, Fi-00076 Aalto, Finland;

    Department of Micro- and Nanosdences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aatto, Finland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    atomic layer deposition; plasma; aluminum nitride;

    机译：原子层沉积;等离子体;氮化铝;

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