• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Structural and dielectric properties of Ru-based gate/Hf-doped Ta_2O_5 stacks
【24h】

Structural and dielectric properties of Ru-based gate/Hf-doped Ta_2O_5 stacks

机译：钌基栅/掺f的Ta_2O_5叠层的结构和介电性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hf-doped Ta2_O_5 thin films are studied with respect to their composition, dielectric and electrical properties. The incorporation of Hf is performed by sputtering of a 0.7 nm thick Hf layer on top of Ta_2O_5 and subsequent annealing to stimulate diffusion of Hf into Ta_2O_5 and their intermixing. The elemental in-depth distribution of the films is investigated by the time of flight secondary ion mass spectroscopy (ToF-SIMS), which has revealed that Hf and Ta_2O_5 are intermixed throughout the whole thickness. Two sub-layers exist in all the samples - an upper homogeneous Hf-doped Ta_2O_5 sub-layer and a near interfa-cial region which is a mixture of Ta- and Si-oxides. The X-ray reflectivity (XRR) analysis shows existence of interfacial layer with a thickness of about 1.9-2 nm, irrespectively of the total thickness of the stacks. Metal-oxide-Si structures with Ru and RuO_2 metal electrodes have been prepared and investigated in terms of dielectric constant, effective work function (EWF) and interfacial layer parameters. The influence of post-metallization annealing steps on these parameters was also studied.
机译：研究了掺f的Ta2_O_5薄膜的组成，介电性能和电性能。 Hf的掺入是通过在Ta_2O_5顶部溅射0.7 nm厚的Hf层并随后进行退火以刺激Hf扩散到Ta_2O_5中并进行混合来进行的。通过飞行时间二次离子质谱（ToF-SIMS）对薄膜的元素深度分布进行了研究，结果表明Hf和Ta_2O_5在整个厚度范围内相互混合。在所有样品中都存在两个子层-上部均匀的Hf掺杂的Ta_2O_5子层和一个接近的界面区域，该区域是Ta和Si氧化物的混合物。 X射线反射率（XRR）分析表明存在界面层，该界面层的厚度为约1.9-2nm，而与堆叠的总厚度无关。制备了具有Ru和RuO_2金属电极的金属氧化物Si结构，并根据介电常数，有效功函数（EWF）和界面层参数进行了研究。还研究了后金属化退火步骤对这些参数的影响。

著录项

  • 来源
    《Applied Surface Science》 |2011年第17期|p.7876-7880|共5页
  • 作者

    A.Paskaleva; M.Tapajna; E.Dobrocka; K.Husekova; E.Atanassova; K.Frohlich;

  • 作者单位

    Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia,H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 ITL, UK;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia;

    Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    hf-doped ta_2o_5 high-k dielectrics; ru-based metal gate; high-k/metal gate stacks;

    机译：掺杂hf的ta_2o_5高k电介质;钌基金属门高k /金属栅叠层;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号