• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Silicon Rich Silicon Oxide Films Deposited By Radio Frequency Plasma Enhanced Chemical Vapor Deposition Method: Optical And Structural Properties
【24h】

Silicon Rich Silicon Oxide Films Deposited By Radio Frequency Plasma Enhanced Chemical Vapor Deposition Method: Optical And Structural Properties

机译：射频等离子体增强化学气相沉积法沉积的富硅氧化硅膜：光学和结构性质

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Silicon rich silicon oxide films have been deposited by plasma enhanced chemical vapour deposition using a gas mixture of silane, carbon-di-oxide and hydrogen. Silicon nanocrystals formations in the as deposited silicon rich silicon oxide films have been detected by high resolution transmission electron microscopy, scanning electron microscopy, Raman scattering and X-ray diffraction studies. Structural changes under different deposition condition have been studied by Fourier transform infrared spec-troscopy. The oxygen and hydrogen bonding configurations have been obtained from Fourier transform infrared spectroscopy. Room temperature photoluminescence spectra have been observed for the as deposited films. The structural properties together with photoluminescence spectra allowed us to gain insight about the Si nanocrystal formation.
机译：富硅的氧化硅膜已经通过使用硅烷，二氧化碳和氢气的气体混合物通过等离子体增强化学气相沉积来沉积。通过高分辨率透射电子显微镜，扫描电子显微镜，拉曼散射和X射线衍射研究已经检测出沉积的富硅氧化硅膜中的硅纳米晶体形成。通过傅里叶变换红外光谱研究了不同沉积条件下的结构变化。氧和氢键的构型已从傅立叶变换红外光谱法获得。对于所沉积的膜已经观察到室温光致发光光谱。结构特性以及光致发光光谱使我们能够洞悉Si纳米晶体的形成。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号