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首页> 外文期刊>Applied Surface Science >Silicon Oxynitride Thin Films Synthesised By The Reactive Gas Pulsing Process Using Rectangular Pulses
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Silicon Oxynitride Thin Films Synthesised By The Reactive Gas Pulsing Process Using Rectangular Pulses

机译：矩形脉冲反应气脉冲法合成氮氧化硅薄膜

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摘要

Silicon oxynitride thin films were synthesised by the reactive gas pulsing process using an argon, oxygen and nitrogen gas mixture from a semiconductor Si target. Argon and nitrogen were introduced at a constant mass flow rate, whereas oxygen gas was periodically supplied using a rectangular pulsed flow rate. The O_2 injection time Ton (or duty cycle a) was the only varied parameter. The influences of this parameter on the discharge behaviour, on the Si target voltage, and on the resulting chemical composition of the films were investigated. The temporal evolution of the total pressure exhibits exponential shape differing from the rectangular oxygen pulse shape, due to the response time of the gas flowmeter and to the progressive oxidation of the target and the chamber walls. During the T_(ON) time, the preferential adsorption of the introduced O_2 induces a decay in Si target voltage. Reversion to the nitrided mode is still possible as soon as the O2 injection is stopped. The elemental analyses assessed by secondary neutral mass spectrometry (SNMS) showed that the O/N ratio within silicon oxynitride films linearly depends on the T_(on0 time. Increasing the duty cycle a over a certain value results in an oxidised steady state formation during the T_(on) time. This formation was observed by real time measurements of the emission lines ratio J(O~* )//(Ar~*) indicative of the O2 partial pressure and confirmed by the time derivative of the target voltage. During the T_(OFF) time, the alternation with the nitrided mode becomes impossible, leading to the specific synthesis of stoichiometric SiO_2 films.
机译：通过反应气体脉冲工艺，使用来自半导体Si靶的氩气，氧气和氮气混合物，合成氮氧化硅薄膜。以恒定的质量流量引入氩气和氮气，而使用矩形脉冲流量周期性地供应氧气。 O_2注入时间Ton（或占空比a）是唯一变化的参数。研究了该参数对放电性能，Si靶电压以及对所得膜的化学组成的影响。由于气体流量计的响应时间以及目标和腔室壁的逐渐氧化，总压力的时间演变呈现出与矩形氧脉冲形状不同的指数形状。在T_（ON）时间内，引入的O_2的优先吸附引起Si靶电压的衰减。一旦停止注入氧气，仍然有可能恢复为氮化模式。二次中性质谱（SNMS）评估的元素分析表明，氮氧化硅膜中的O / N比线性关系取决于T_（on0）时间。将占空比a增大至一定值会导致在氧化过程中形成氧化稳态。 T_（on）时间，通过实时测量表示O2分压的发射线比率J（O〜*）//（Ar〜*）观察到这种现象，并通过目标电压的时间导数进行了确认。在T_（OFF）时间，与氮化模式的交替变得不可能，从而导致化学计量的SiO_2膜的特定合成。

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  • 来源
    《Applied Surface Science》 |2011年第23期|p.10065-10071|共7页
  • 作者

    E.Aubry; S. Weber; A. Billard; N. Martin;

  • 作者单位

    lnstitut Femto-ST (UMR 6174 CNRS), UFC, ENSMM, UTBM, 32 Avenue de VObservatoire, 25044 Besancon Cedex, France;

    lnstitut Jean Lamour, UMR 7198 CNRS-Nancy-Universitt-UPV-Metz, icole des Mines de Nancy, Pare de Saurupt, CS14243,54042 Nancy, France;

    Laboratoire d'Etudes et de Recherche sur les Matiriaux, les Procedes et les Surfaces (LERMPS-UTBM), site de Montbiliard, 90010 Belfort Cedex, France;

    lnstitut Femto-ST (UMR 6174 CNRS), UFC, ENSMM, UTBM, 32 Avenue de VObservatoire, 25044 Besancon Cedex, France;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    SiCN; Reactive sputtering; Optical emission spectroscopy; Reactive gas pulsing process;

    机译：SiCN;反应溅射;光发射光谱;反应气体脉冲过程;

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