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The Influence Of Ga Source And Substrate Position On The Growth Of Low Dimensional Gan Wires By Chemical Vapour Deposition

机译:镓源和衬底位置对化学气相沉积法生长低维赣线的影响

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This paper presents the investigation of low dimensional GaN structures synthesized from Ni-catalyzed chemical vapour deposition (CVD) method under two different conditions, i.e. Ga source and substrate position. Comparative studies based on the morphological, structural and optical characteristics of synthesized GaN wires were carried out in this work. The variations of morphological and dimensional aspects of the GaN wires were attributed to the position of Ga precursor and substrates. These factors were found to be able to influence the degree of supersaturation of gaseous reactants, which is essential in the growth of GaN wires by vapour-liquid-solid (VLS) mechanism. The synthesized GaN wires typically were found to have diameters ranging 35-80 nm (nanowires) and 0.4-1.3 (j,m (microwires), respectively, with length up to several ten of microns. X-ray diffraction (XRD) results indicated that the grown GaN wires were hexagonal wurzite phase. Ultraviolet (UV) and blue emissions were observed from photo-luminescence (PL) measurements. Raman spectra displayed asymmetrical and broadened bands which could be ascribed to the size effect, surface disorder and internal strain of the synthesized GaN wires.
机译:本文介绍了在两种不同条件下,即Ga源和衬底位置的情况下,通过Ni催化化学气相沉积(CVD)方法合成的低维GaN结构的研究。在这项工作中,基于合成的GaN线的形态,结构和光学特性进行了比较研究。 GaN线的形态和尺寸方面的变化归因于Ga前体和衬底的位置。发现这些因素能够影响气态反应物的过饱和度,这在通过气液固(VLS)机理生长GaN线中至关重要。通常发现合成的GaN线的直径范围分别为35-80 nm(纳米线)和0.4-1.3(j,m(微线)),长度可达数十微米。X射线衍射(XRD)结果表明表示生长的GaN线为六方纤锌矿相,通过光致发光(PL)测量观察到紫外线(UV)和蓝光发射,拉曼光谱显示出不对称和宽谱带,这可能归因于尺寸效应,表面无序和内部应变。合成的GaN线。

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