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Applied Surface Science Zirconium-Assisted Reaction In Low Temperature Atomic Layer Deposition Using Bis(Ethyl-Methyl-Amino)Silane And Water

机译:双(乙基-甲基-氨基)硅烷和水在低温原子层沉积中应用表面科学锆辅助反应

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摘要

The reaction of Bis(ethyl-methyl-amino)silane (BEMAS) and water in atomic layer deposition (AL.D) became possible when Zr-containing species were adsorbed on the vacant sites of the surface after a pulse and purge of BEMAS. The growth rates of the Si(Zr)O_x films were 0.8-0.9 nm/cycle in the temperature range of 185-325 °C. This phenomenon probably originates from the highly reactive hydroxyl species generated by Zr atoms. From this point of view, transition metals make reactant gas molecules to be highly activated in the ALD processes of transition metal oxides and nitrides, which might be an important factor that determines the ALD characteristics.
机译:在脉冲和吹扫BEMAS之后,将含Zr的物质吸附在表面的空位上时,双(乙基-甲基-氨基)硅烷(BEMAS)与水的反应就可能在原子层沉积(AL.D)中进行。 Si(Zr)O_x薄膜在185-325°C的温度范围内的生长速率为0.8-0.9 nm /循环。这种现象可能源自Zr原子产生的高反应性羟基。从这个角度来看,过渡金属使反应气体分子在过渡金属氧化物和氮化物的ALD过程中被高度活化,这可能是决定ALD特性的重要因素。

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