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首页> 外文期刊>Applied Surface Science >Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods
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Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods

机译：离子束溅射沉积的W / Si多层膜：超溅射对超短时间界面结构和结构改性的影响

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摘要

X-ray multilayer mirrors of period ranging from 9.6 to 1.7 nm, deposited using ion beam sputtering, have been examined using grazing incidence X-ray reflectivity (GIXRR) and grazing incidence X-ray diffraction. Detailed analysis of GIXRR data revealed that significant amount of re-sputtering of Si layer takes place while W deposition is underway. Re-sputtering is mainly due to bombardment of high-energy neutrals getting reflected from the W target. Due to re-sputtering interface of the multilayer becomes asymmetric. This puts a major hindrance in avoiding the intermixing and achieving sharp interfaces at shorter periods. Maximum thickness of Si which gets lost due to re-sputtering during deposition is ~0.8 nm. The shortest period multilayer estimated, that could be deposited without intermixing, was 2.7 nm. These results are of significance for developing low period W/Si multilayers.
机译：使用掠入射X射线反射率（GIXRR）和掠入射X射线衍射检查了使用离子束溅射沉积的周期为9.6到1.7 nm的X射线多层反射镜。对GIXRR数据的详细分析表明，在进行W沉积时，会发生大量的Si层再溅射。再次溅射的主要原因是从W目标反射了对高能中性分子的轰炸。由于重新溅射，多层的界面变得不对称。这成为避免相互混合并在较短的时间内获得尖锐界面的主要障碍。由于沉积过程中的重新溅射而损失的最大Si厚度约为0.8 nm。估计的最短周期多层可以在不混合的情况下沉积，为2.7 nm。这些结果对于开发低周期W / Si多层具有重要意义。

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  • 来源
    《Applied Surface Science》 |2011年第24期|p.10704-10709|共6页
  • 作者

    S.K. Rai; Arijeet Das; A.K. Srivastava; G.S. Lodha; Rajnish Dhawan;

  • 作者单位

    Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;

    Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;

    Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;

    Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;

    Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;

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  • 正文语种 eng
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  • 关键词

    multilayer x-ray reflectivity x-ray diffraction x-ray optics;

    机译：多层X射线反射率X射线衍射X射线光学;

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