Ternary semiconductor compounds CuInS_2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)

Shaoxiong Lin; Xuezhao Shi; Xin Zhang; Huanhuan Kou; Chunming Wang

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Ternary semiconductor compounds CuInS_2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)

机译：通过电化学原子层沉积（EC-ALD）合成的三元半导体化合物CuInS_2（CIS）薄膜

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In this paper the formation and characterization of the I-III-VI_2 semiconductor compound CuInS_2 (CIS) on gold substrate at room temperature by electrochemical atomic layer deposition (EC-ALD) method are reported. Optimum deposition potentials for each element are determined using cyclic voltammetry (CV) technique and Amperometric I-t method is used to prepare the semiconductor compound. These thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and Fourier transform infrared spectroscopy (FT-IR). XRD results indicate that the CIS thin films have a (112) preferred orientation. The XPS analyses of the films reveal that Cu, In and S are present in an atomic ratio of approximately 1:1:2. And their semiconductor band gaps are found to be 1.50 eV by FT-IR.

机译：本文报道了在室温下通过电化学原子层沉积（EC-ALD）方法在金基底上形成I-III-VI_2半导体化合物CuInS_2（CIS）的特性。使用循环伏安法（CV）确定每种元素的最佳沉积电位，并使用安培I-t方法制备半导体化合物。这些薄膜的特征在于X射线衍射（XRD），X射线光电子能谱（XPS），场发射扫描电子显微镜（FE-SEM）和傅里叶变换红外光谱（FT-IR）。 XRD结果表明，CIS薄膜具有（112）优选取向。薄膜的XPS分析表明，Cu，In和S的原子比约为1：1：2。通过FT-IR发现它们的半导体带隙为1.50 eV。

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来源
《Applied Surface Science》 |2010年第13期|p.4365-4369|共5页
作者
Shaoxiong Lin; Xuezhao Shi; Xin Zhang; Huanhuan Kou; Chunming Wang;
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作者单位

Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;

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正文语种 eng
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关键词
CuInS_2; gold substrate; electrochemical atomic layer deposition; underpotential deposition;

机译：CuInS_2;金基底电化学原子层沉积;欠电位沉积;

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Ternary semiconductor compounds CuInS_2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)

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