Composition modulation analysis of In_xGa_(1-x)P layers grown on (001) germanium substrates

C.E.Pastore; D. Araujo; M.Gutierrez; J.Miguel-Sanchez; E.Rodriguez-Messmer

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Composition modulation analysis of In_xGa_(1-x)P layers grown on (001) germanium substrates

机译：在（001）锗衬底上生长的In_xGa_（1-x）P层的成分调制分析

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The development of new photovoltaic approach to improve costs and efficiencies is focused on the new materials and new technologies. InGaP is, in this sense, a key material for solar conversion. In particular, in the solar concentration approach, this material is part of multiple junction solar cells. Its low lattice mismatch with germanium and its adequate bandgap make it very promising. This paper shows how compositional modulation can affect the InGaP emitter and the AlGaAs tunnel junctions. The influence of the growth conditions, on the compositional modulation and misfit and threading dislocations, in In_(0.49)Ga_(0.51)P layers is demonstrated by TEM on purposely grown single InGaP layers. High resolution electron microscopy (HREM) intensity profiles showed no elastic lattice related modulation.

机译：开发新的光伏方法以提高成本和效率的重点是新材料和新技术。从这个意义上讲，InGaP是太阳能转换的关键材料。特别地，在太阳能集中方法中，该材料是多结太阳能电池的一部分。它与锗的低晶格失配和足够的带隙使其非常有前途。本文展示了成分调制如何影响InGaP发射极和AlGaAs隧道结。通过TEM在有意生长的单个InGaP层上证明了In_（0.49）Ga_（0.51）P层中生长条件对成分调制，失配和螺纹位错的影响。高分辨率电子显微镜（HREM）强度曲线显示没有弹性晶格相关的调制。

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来源
《Applied Surface Science》 |2010年第18期|P.5681-5683|共3页
作者
C.E.Pastore; D. Araujo; M.Gutierrez; J.Miguel-Sanchez; E.Rodriguez-Messmer;
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作者单位

Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cadiz, 11510 Puerto Real, Spain;

rnDepartamento de Ciencia de los Materiales e IM y QI, Universidad de Cadiz, 11510 Puerto Real, Spain;

rnDepartamento de Ciencia de los Materiales e IM y QI, Universidad de Cadiz, 11510 Puerto Real, Spain;

rnIsofoton, C/ Severn Ochoa 50, 29590 Malaga, Spain;

rnIsofoton, C/ Severn Ochoa 50, 29590 Malaga, Spain;

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正文语种 eng
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关键词
electron microscopy; photovoltaic; germanium; InGaP; phase separation;

机译：电子显微镜;光伏锗;InGaP;相分离;

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Composition modulation analysis of In_xGa_(1-x)P layers grown on (001) germanium substrates

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