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Studies of resistance switching effects in metal/YBa_2Cu_3O_(7-x) interface junctions

机译:金属/ YBa_2Cu_3O_(7-x)界面结中的电阻切换效应研究

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摘要

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa_2Cu_3O_(7-x) thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa_2Cu_3O_(7-x) thin film-PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa_2Cu_3O_(7-x) films in the nano-scale vicinity of the junction interface under applied electrical fields.
机译:在4.2 K至300 K的温度范围内,测量了由外延c轴取向的YBa_2Cu_3O_(7-x)薄膜微桥和Ag对电极形成的平面结的电流-电压特性。与开关有关的磁滞行为根据最大电流偏置和温度依赖性,观察和分析了从高阻态到低阻态的结电阻的变化,反之亦然。使用扫描隧道显微镜在亚微米级YBa_2Cu_3O_(7-x)薄膜-PtIr点接触结上观察到了相同的效果。在扩散模型中讨论了这些现象,描述了施加电场后结界面纳米级附近的YBa_2Cu_3O_(7-x)薄膜中的氧空位漂移。

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  • 来源
    《Applied Surface Science》 |2010年第18期|P.5684-5687|共4页
  • 作者单位

    Department of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

    rnDonetsk Institute for Physics and Engineering, NASU, 83114 Donetsk, Ukraine;

    rnInstitute of Electrical Engineering SAS, 84104 Bratislava, Slovak Republic;

    rnInstitute of Electrical Engineering SAS, 84104 Bratislava, Slovak Republic;

    rnDepartment of Experimental Physics, FMPI, Comenius University, 84248 Bratislava, Slovak Republic;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    resistive switching effect; STM; planar junction; superconductivity;

    机译:电阻切换效果;STM;平面结超导;

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