• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching
【24h】

Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

机译：Ag辅助光化学刻蚀形成的薄膜多孔非晶碳化硅的结构和光学性质

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K_2S_2O_8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-S1C target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K_2S_2O_8 solution has been proposed.
机译：在这项工作中，我们介绍了在254 nm波长的紫外线照射下，使用HF / K_2S_2O_8溶液通过Ag辅助的光化学刻蚀在氢化非晶SiC（a-SiC：H）上形成多孔层的方法。 d.c制作了非晶膜a-SiC：H。使用热压多晶6H-S1C靶进行磁控溅射。由于SiC层的高电阻率，约为1.6MΩcm，并且为了促进化学蚀刻，在真空下将高纯度银（Ag）的金属薄膜沉积到了薄的a-SiC：H层上。通过扫描电子显微镜，二次离子质谱，红外光谱和光致发光来表征蚀刻的表面。结果表明，经刻蚀的a-SiC：H表面的形貌随刻蚀时间的变化而变化。对于20分钟的蚀刻时间，表面呈现出半球形的凹陷，表明多孔SiC层已打孔。刻蚀的a-SiC：H样品20分钟的光致发光特性显示出较高的蓝色PL，而已显示PL随刻蚀时间的延长而降低。最后，提出了碳化硅在1HF / 1K_2S_2O_8溶液中的溶解机理。

著录项

  • 来源
    《Applied Surface Science》 |2010年第18期|P.5592-5595|共4页
  • 作者

    A.Boukezzata; A. Keffous; A.Cheriet; Y.Belkacem; N.Gabouze; A. Manseri; G. Nezzal; M. Kechouane; A. Bright; L. Guerbous; H. Menari;

  • 作者单位

    Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

    rnHouari Boumediene University (USTHB), Chemical Faculty, Algiers, Algeria;

    rnHouari Boumediene University, Physical Faculty, Algiers, Algeria;

    rnHouari Boumediene University, Physical Faculty, Algiers, Algeria;

    rnAlgerian Nuclear Research Center (CRNA), Algiers, Algeria;

    rnSilicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers, Algeria;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    silicon carbide; thin layer; photochemical etching; SIMS; SEM;

    机译：碳化硅薄层;光化学刻蚀;模拟人生;扫描电镜;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号