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Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films

机译：高压氢处理对ZnO薄膜结构和电性能的影响

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摘要

ZnO thin films were treated by high-pressure hydrogen (H_2). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H_2 treatment. X-ray diffraction patterns show that the Zn(OH)_2 phases formed after H_2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H-O-Zn bond. The phenomenon shows that it is easy to form O-H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance.
机译：ZnO薄膜用高压氢（H_2）处理。扫描电子显微镜（SEM）图像显示，通过H_2处理，ZnO薄膜的表面形态已发生了显着变化。 X射线衍射图谱表明，H_2处理后形成了Zn（OH）_2相。 X射线光电子能谱结果表明，H原子通过形成H-O-Zn键被掺杂到ZnO的表面。该现象表明，在高压氢环境下，在ZnO中比在H原子上更容易形成O-H键。

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  • 来源
    《Applied Surface Science》 |2010年第22期|p.6770-6774|共5页
  • 作者

    Chunye Li; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Yang liu; Rensheng Shen; Wangcheng Li; Guoguang Wu; G.T.Du;

  • 作者单位

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China,School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People's Republic of China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People's Republic of China;

    School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, People's Republic of China,State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People's Republic of China;

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  • 正文语种 eng
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  • 关键词

    zno; mocvd; high-pressure h_2; zn(oh)_2;

    机译：zno;mocvd;高压h_2;zn（oh）_2;

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