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Surface characterization and growth mechanism of laminated Ti_3SiC_2 crystals fabricated by hot isostatic pressing

机译：热等静压法制备的叠层Ti_3SiC_2晶体的表面表征和生长机理

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摘要

Laminated Ti_3 SiC_2 crystals were prepared by hot isostatic pressing from Ti, Si, C and Al powders with NaCl additive in argon at 1350 ℃ The morphology and microstructure of Ti_3SiC_2 crystals were investigated by means of XRD, SEM, and TEM. The high symmetry and crystalline was revealed by high resolution transmission electronic microscope (HRTEM) and selected area electron diffraction (SAED). The growth mechanism of Ti_3SiC_2 crystals controlled by two-dimensional nucleation was put forward. The growth pattern of layered steps implies that the growth of the (002) face should undergo two steps, the intermittent two-dimensional nucleation and the continuous lateral spreading of layers on growth faces.
机译：于1350℃，在氩中，用含NaCl添加剂的Ti，Si，C和Al粉末对粉末进行热等静压，制备了Ti_3 SiC_2叠层晶体。用XRD，SEM和TEM研究了Ti_3SiC_2晶体的形貌和微观结构。高分辨率透射电子显微镜（HRTEM）和选择区域电子衍射（SAED）揭示了高对称性和结晶性。提出了二维成核控制的Ti_3SiC_2晶体的生长机理。分层台阶的生长方式意味着（002）面的生长应经历两个步骤，即间歇性二维成核作用和在生长面上连续的横向横向扩展。

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  • 来源
    《Applied Surface Science》 |2010年第23期|P.6986-6990|共5页
  • 作者

    Qiong Wu; Changsheng Li; Hua Tang;

  • 作者单位

    School of Material Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, China;

    rnSchool of Material Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, China;

    rnSchool of Material Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Ti_3SiC_2; hot isostatic pressing; growth mechanism;

    机译：Ti_3SiC_2;热等静压;生长机制;

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