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Origin of ohmic behavior in Ni, Ni_2Si and Pd contacts on n-type SiC

机译：n型SiC上Ni，Ni_2Si和Pd触点中欧姆行为的起源

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摘要

Ni, Ni_2Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature range of 750-1150 ℃. The annealed contacts were analyzed before and after acid etching, and different features were found in unetched and etched contacts. Carbon left on the SiC surface after the acid etching of Ni_2Si contacts annealed at 960 ℃ was highly graphitized. In nickel contacts, the graphitization of interface carbon began at 960 ℃ and increased after annealing at higher temperatures. In palladium contacts, the onset of the interface carbon graphitization was observed after annealing at 1150 ℃. For all three types of metallization, the minimal values of contact resistivity were achieved only when the sharp first-order peak at 1585 cm~(-1) and distinct second-order peak at ～2700cm~(-1) related to the presence of graphitized carbon were detected by Raman spectroscopy after the acid etching of contacts. The properties of unan-nealed secondary contacts deposited onto etched primary contacts were similar to the properties of the primary contacts unless carbon was selectively etched. The results show that ohmic behavior of Ni-based and Pd contacts on n-type SiC originates from the formation of graphitic carbon at the interface with SiC.
机译：在n型4H-SiC上制备了Ni，Ni_2Si和Pd触点，并在750-1150℃的温度范围内进行了退火。在酸蚀刻之前和之后分析退火的触点，并且在未蚀刻和蚀刻的触点中发现不同的特征。 Ni_2Si的酸腐蚀在960℃退火后，残留在SiC表面的碳被高度石墨化。在镍触点中，界面碳的石墨化始于960℃，并在较高温度下退火后增加。在钯触点中，在1150℃退火后观察到界面碳石墨化的开始。对于所有这三种类型的金属化，只有当1585 cm〜（-1）的尖锐的一阶峰和〜2700cm〜（-1）的明显的二阶峰与铁氧体的存在有关时，才能实现最小的接触电阻率。触点酸蚀后，通过拉曼光谱法检测石墨化碳。除非选择性地蚀刻了碳，否则沉积到蚀刻的初级触点上的未退火的次级触点的特性与初级触点的特性相似。结果表明，n型SiC上的Ni基和Pd接触的欧姆行为源自与SiC界面处石墨碳的形成。

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  • 来源
    《Applied Surface Science》 |2010年第2期|p.414-422|共9页
  • 作者

    Bohumil Barda; Petr Machac; Stanislav Cichon; Vladimir Machovic; Marie Kudrnova; Alena Michalcova; Jakub Siegel;

  • 作者单位

    Department of Solid State Engineering, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Department of Solid State Engineering, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Department of Solid State Engineering, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Central Laboratories, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Central Laboratories, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Department of Metals and Corrosion Engineering, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic,Department of Chemical Technology of Monuments Conservation, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6,Czech Republic;

    Department of Solid State Engineering, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

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  • 正文语种 eng
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  • 关键词

    ohmic contact; silicon carbide; nickel; palladium; graphitization; raman spectroscopy;

    机译：欧姆接触碳化硅镍;钯;石墨化拉曼光谱;

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