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Quantitative analysis of graded Cu(In_(1-x),Ga_x)Se_2 thin films by AES, ICP-OES, and EPMA

机译:AES,ICP-OES和EPMA定量分析渐变Cu(In_(1-x),Ga_x)Se_2薄膜

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摘要

The overall composition and the compositional profile of the quaternary semiconductor Cu(In_(1-x),Ga_x)Se_2 (CIGS) have strong effects on the performance of photovoltaic devices based on it. Recent work that has yielded ~20% efficient solar cells based on CIGS has forced extra attention on quantitative analysis of the absorber layers. In this paper we present details of the procedures used to generate detailed compositional profiles of graded Cu(In_(1-x),Ga_x)Se_2 thin films by Auger electron spectroscopy (AES) that when integrated, agree quantitatively with inductively-coupled plasma optical emission spectrometry (ICP-OES) data on the same films. The effects of sample rotation during sputter depth profiling on the quantification results are described. Details of the procedures used for the ICP-OES and wavelength-dispersed electron probe microanalysis (EPMA) analyses are also presented. Finally, we show why X-ray microanalysis techniques alone should not be used to argue that specific windows of copper and gallium concentrations can yield high performance devices.
机译:四元半导体Cu(In_(1-x),Ga_x)Se_2(CIGS)的整体组成和组成轮廓对基于它的光伏器件的性能有很大影响。基于CIGS的近20%高效太阳能电池的最新工作迫使人们特别注意吸收层的定量分析。在本文中,我们介绍了通过俄歇电子能谱(AES)生成渐变的Cu(In_(1-x),Ga_x)Se_2薄膜的详细组成轮廓的详细过程,该过程集成后与感应耦合等离子体光学定量吻合相同膜上的发射光谱(ICP-OES)数据。描述了溅射深度分析过程中样品旋转对定量结果的影响。还介绍了用于ICP-OES和波长分散电子探针微分析(EPMA)分析的程序的详细信息。最后,我们说明了为什么不应仅使用X射线微分析技术来论证特定的铜和镓浓度窗口可以产生高性能的设备。

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