机译:AES,ICP-OES和EPMA定量分析渐变Cu(In_(1-x),Ga_x)Se_2薄膜
National Renewable Energy Laboratory, NCPV, 1617 Cole Blvd., MS 3218, Golden, CO 80401, USA;
National Renewable Energy Laboratory, Golden, CO 80401, USA;
National Renewable Energy Laboratory, Golden, CO 80401, USA;
National Renewable Energy Laboratory, Golden, CO 80401, USA;
CIGS; auger; electron probe microanalysis; photovoltaics; solar;
机译:通过将镓掺入Cu(In_(1-x)Ga_x)Se_2吸收剂薄膜中形成的Ga梯度分布
机译:Rietveld分析法确定MBE生长的Cu(In_(1-x)Ga_x)Se _2薄膜中的Cu(In_(1-x)Ga_x)_3Se _5缺陷相
机译:应用趋肤深度理论的GIXRD方法确定Cu(In_(1-x)Ga_x)Se_2薄膜的深度剖面晶体取向
机译:飞秒和纳秒脉冲激光沉积合成的Cu(In_(1-x)Ga_x)Se_2薄膜不同性能的影响
机译:Y(1-x)Pr(x)Ba(2)Cu(3)O(7)薄膜的生长,传输和隧穿光谱作为晶体取向的函数
机译:纳米复合材料(BaTiO3)1-x:(Sm2O3)x薄膜中垂直界面诱导的介电弛豫
机译:通过溅射和共蒸发沉积的Cu(In,Ga)Se_2薄膜的强度,刚度和微观结构
机译:非晶sn(sub 1-x)Cu(sub x)薄膜超导电子隧穿研究