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首页> 外文期刊>Applied Surface Science >Erbium containing ZnO prepared by ion beam sputtering deposition and thermal annealing mixing
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Erbium containing ZnO prepared by ion beam sputtering deposition and thermal annealing mixing

机译：离子束溅射沉积和热退火混合制备含的ZnO。

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摘要

Erbium containing ZnO was prepared by ion beam sputtering deposition and thermal annealing. Alternate ZnO and erbium layers were deposited on silicon substrates at room temperature. Annealed sample shows mixing of erbium and ZnO layers, while strong 980 nm emission was observed under the excitation of a 325 nm laser which is due to the inner 4f transition of Er~(3+) from ~4I_(11/2) to ~4I_(15/2). Under the optimized annealing condition, more than 80% of oxygen atoms are still located in stoichiometric ZnO matrixes. X-ray diffraction analysis shows a shift of ZnO (002) diffraction peak position to the larger angle value, indicating an elongated c-axis and suggesting the incorporation of erbium ions into ZnO. Variable temperature photoluminescence analysis indicates that the emission at 980 nm is due to energy transfer from defect-related deep level emission of host ZnO to erbium ions.
机译：通过离子束溅射沉积和热退火制备含b的ZnO。室温下，交替的ZnO和层沉积在硅基板上。退火样品显示mixing和ZnO层混合，而在325 nm激光的激发下观察到980 nm的强发射，这是由于Er〜（3+）从〜4I_（11/2）到〜的内部4f跃迁所致4I_（15/2）。在优化的退火条件下，超过80％的氧原子仍位于化学计量的ZnO基质中。 X射线衍射分析显示ZnO（002）衍射峰的位置向较大的角度值移动，表明c轴伸长，这表明离子已掺入ZnO中。可变温度光致发光分析表明，在980 nm处的发射是由于从主体ZnO的缺陷相关深能级发射到to离子的能量转移引起的。

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  • 来源
    《Applied Surface Science》 |2009年第14期|6525-6528|共4页
  • 作者

    Liang-Chiun Chao; Chung-Wen Chang; Dong-Yi Tsai;

  • 作者单位

    Department of Electronic Engineering, National Taiwan University of Science and Technology, #43 KeeLung Road, Sec. 4, Taipei 106, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, #43 KeeLung Road, Sec. 4, Taipei 106, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, #43 KeeLung Road, Sec. 4, Taipei 106, Taiwan;

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  • 正文语种 eng
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  • 关键词

    ZnO; sputtering; photoelectron spectroscopy; defects;

    机译：氧化锌;溅射光电子能谱缺陷;

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