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首页> 外文期刊>Applied Surface Science >New Design Of Nozzle Structures And Its Effect On The Surface And Crystal Qualities Of Thick Gan Using A Horizontal Hvpe Reactor
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New Design Of Nozzle Structures And Its Effect On The Surface And Crystal Qualities Of Thick Gan Using A Horizontal Hvpe Reactor

机译：卧式Hvpe反应器喷嘴结构的新设计及其对厚Gan表面和晶体品质的影响。

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摘要

High-quality thick GaN films without cracks were achieved by using a new nozzle structure in the reactor grown by the hydride vapor phase epitaxy on sapphire substrates. Optical contrast microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray double diffraction (XRD) and cathodoluminescence (CL) were carried out to reveal the surface, crystal and optical properties of the GaN epilayer. It was found that the nozzle structure in the reactor has a large effect on the growth rate, surface flat, crystal quality, and the uniformity of the growth. Compared with the old one, the new nozzle structure (denoted as multi-layers nozzle) can improve dramatically the properties of thick GaN. Mirror, colorless and flat GaN thick film was obtained and its (0 0 0 2) FWHM results were reduced from 1000 to 300 arcsec when the new nozzle was used. AFM result revealed a step flow growth mode for GaN layer with the new nozzle. Room-temperature CL spectra on the GaN films showed a strong near-band-edge peak for the new nozzle, but there is only weak emitting peak for the old nozzle. New nozzle structure can improve the uniform of flow field near the surface of substrates compared with the old one, which leads to the improvement of properties of GaN thick film by hydride vapor phase epitaxy (HVPE).
机译：通过在氢化物气相外延在蓝宝石衬底上生长的反应器中使用新的喷嘴结构，可以实现高质量，无裂纹的GaN厚膜。进行了光学对比显微镜，扫描电子显微镜（SEM），原子力显微镜（AFM），X射线双衍射（XRD）和阴极发光（CL），以揭示GaN外延层的表面，晶体和光学性质。发现反应器中的喷嘴结构对生长速率，表面平坦度，晶体质量和生长均匀性具有很大影响。与旧的相比，新的喷嘴结构（称为多层喷嘴）可以显着改善厚GaN的性能。使用新喷嘴时，获得了无色，平坦的镜面GaN厚膜，其（0 0 0 2）FWHM结果从1000 arcsec降低到300 arcsec。 AFM结果显示了采用新喷嘴的GaN层的阶梯流生长模式。 GaN膜上的室温CL光谱显示，新喷嘴的近带边缘峰很强，而旧喷嘴的发射峰只有弱峰。与旧的喷嘴结构相比，新的喷嘴结构可以改善基板表面附近的流场均匀性，从而通过氢化物气相外延（HVPE）改善GaN厚膜的性能。

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