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首页> 外文期刊>Applied Surface Science >Effect Of Filament Biasing On Nanocrystalline-si Films Deposited By Hot Wire Chemical Vapor Deposition
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Effect Of Filament Biasing On Nanocrystalline-si Films Deposited By Hot Wire Chemical Vapor Deposition

机译：细丝偏压对热丝化学气相沉积沉积纳米硅薄膜的影响

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摘要

Nanocrystalline silicon (nc-Si) films were deposited by hot wire chemical vapor deposition with applying positive or negative filament biases. These films were characterized by Raman spectroscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Plasmon loss of the Si(2p) band region was shifted to higher energy due to dielectric changes with applied filament biases from negative to positive voltage. A semi-quantitative study of the valence band structure was employed to analyze the bias effect of the valance band in nc-Si networks. Nc-Si with a positive filament bias shows better microstructural properties than those with a negative bias and without biasing nc-Si films.
机译：纳米晶硅（nc-Si）膜是通过施加正或负丝偏压通过热线化学气相沉积来沉积的。这些膜通过拉曼光谱，场发射扫描电子显微镜和X射线光电子能谱表征。 Si（2p）带区的等离子损耗由于施加的灯丝偏压从负电压到正电压的介电变化而转移到更高的能量。对价带结构进行了半定量研究，以分析nc-Si网络中价带的偏置效应。细丝偏压为正的Nc-Si的显微组织性能优于负偏压且未偏压nc-Si膜的Nc-Si。

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