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首页> 外文期刊>Journal of Applied Physics >Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures
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Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

机译：在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性

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摘要

This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 ℃. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 ℃ present longitudinal piezoresistive coefficients as large as -(2.57 ±0.03)×10~(-10)Pa~(-1) with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.
机译：本文报道了通过热线化学气相沉积（HWCVD）和射频等离子体增强化学气相沉积（PECVD）在100至250℃的基板温度下沉积的氢化非晶态和纳米晶硅薄膜的力学和压阻特性。微拉伸技术用于确定膜性能，例如杨氏模量，断裂强度和威布尔参数，以及在较大外加应力下获得的线性和二次压阻系数。表征为85.9±0.3 GPa的薄膜的弹性常数的95％置信区间与沉积方法或薄膜结构无关。相比之下，平均断裂强度值在256±8 MPa和600±32 MPa之间：纳米晶体层比其非晶态对应层略强，与使用PECVD生长的膜相比，使用HWCVD沉积的膜的强度明显提高。提取的威布尔模量低于10。就压阻而言，在250℃沉积的n掺杂射频纳米晶硅膜的纵向压阻系数高达-（2.57±0.03）×10〜（-10）Pa〜（-1） ）的非线性响应。这些值接近晶体硅和在更高温度下沉积的多晶硅层的值。

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  • 来源
    《Journal of Applied Physics》 |2012年第2期|p.024906.1-024906.8|共8页
  • 作者

    J. Gaspar; A. Gualdino; B. Lemke; O. Paul; V. Chu; J. P. Conde;

  • 作者单位

    International Iberian Nanotechnology Laboratory (INL), Braga, Portugal,Department Microsystems Engineering (IMTEK), University of Freiburg, Germany;

    INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;

    Department Microsystems Engineering (IMTEK), University of Freiburg, Germany;

    Department Microsystems Engineering (IMTEK), University of Freiburg, Germany;

    INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;

    INESC Microsistemas e Nanotecnologias, Lisbon, Portugal,Department of Bioengineering, Instituto Superior Tecnico (1ST), Lisbon, Portugal;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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