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Temperature-controlled growth and photoluminescence of AIN nanowires

机译：AIN纳米线的温度控制生长和光致发光

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摘要

By varying the substrate temperature in the range of 800-1000℃, the conditions for the synthesis of A1N nanowires were optimized. Al powders were heated under flowing ammonia gas. The samples were characterized by scanning electron microscopy. X-ray diffraction, transmission electron microscopy, and photoluminescence (PL) spectroscopy. Based on the absence of tip particles, the growth mechanism of A1N nanowires was considered to follow a vapor-solid process. The overall intensity of the PL spectra was increased by increasing the synthesis temperature, whereas their shapes were changed by varying the synthesis temperature. The associated emission mechanisms are discussed.
机译：通过在800-1000℃范围内改变衬底温度，优化了AlN纳米线的合成条件。在流动的氨气中加热铝粉。通过扫描电子显微镜表征样品。 X射线衍射，透射电子显微镜和光致发光（PL）光谱。基于尖端颗粒的不存在，AlN纳米线的生长机理被认为遵循汽固过程。通过提高合成温度可以提高PL光谱的总强度，而通过改变合成温度可以改变其形状。讨论了相关的排放机制。

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  • 来源
    《Applied Surface Science》 |2009年第16期|7221-7225|共5页
  • 作者

    Hyoun Woo Kim; Mesfin Abayneh Kebede; Hyo Sung Kim;

  • 作者单位

    Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

    Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

    Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    nanowires; AlN; temperature;

    机译：纳米线;AlN;温度;

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