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首页> 外文期刊>Applied Surface Science >Improved determination of phosphorus contamination during ion implantation by SRP and simulations
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Improved determination of phosphorus contamination during ion implantation by SRP and simulations

机译：通过SRP和模拟改进了离子注入过程中磷污染的确定

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摘要

Experimental determination of phosphorous cross-contamination during antimony implantation is presented. As a suitable structure for this experiment, a buried layer was employed which is created by implanting antimony followed by a long diffusion process. The implanted samples were analysed by SIMS and spreading resistance (SRP) methods. SRP method has been improved by applying a correction for the carrier spilling effect. A conversion chart for p-n junction depth dependence on phosphorus doping has been calculated by program SUPREM-IV. Comparison of SRP and SIMS methods has shown that SRP method can be used for monitoring the phosphorus cross-contamination and can be easily implemented as an in-line monitor and present an alternative to expensive and time consuming SIMS analysis.
机译：提出了锑植入过程中磷交叉污染的实验测定。作为该实验的合适结构，采用了埋入层，该埋入层是通过注入锑然后进行长时间的扩散过程而形成的。植入的样品通过SIMS和扩展阻力（SRP）方法进行分析。通过对载流子溢出效应进行校正，改进了SRP方法。通过程序SUPREM-IV已计算出p-n结深度对磷掺杂的依赖性的转换图。 SRP和SIMS方法的比较表明，SRP方法可用于监测磷的交叉污染，并且可以轻松地用作在线监测器，并提供了昂贵且费时的SIMS分析的替代方法。

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