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Formation of nanodots on oblique ion sputtered InP surfaces

机译:在倾斜的离子溅射InP表面上形成纳米点

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摘要

Using a field emission gun based scanning electron microscopy, we report the formation of nanodots on the InP surfaces after bombardment by 100 keV Ar~+ ions under off-normal ion incidence (30° and 60° with respect to the surface normal) condition in the fluence range of 1 × 10~(16) to 1 × 10~(18) ions cm~(-2). Nanodots start forming after a threshold fluence of about 1 × 10~(17) ions cm~(-2). It is also seen that although the average dot diameter increases with fluence the average number of dots decreases with increasing fluence. Formation of such nanostructured features is attributed due to ion-beam sputtering. X-ray photoelectron spectroscopy analysis of the ion sputtered surface clearly shows In enrichment of the sputtered InP surface. The observation of growth of nanodots on the Ar~+-ion sputtered InP surface under the present experimental condition matches well with the recent simulation results based on an atomistic model of sputter erosion.
机译:使用基于场发射枪的扫描电子显微镜,我们报道了在非标准离子入射(相对于表面法线为30°和60°)条件下,被100 keV Ar〜+离子轰击后,InP表面上形成了纳米点。能量密度范围为1×10〜(16)至1×10〜(18)个离子cm〜(-2)。在约1×10〜(17)离子cm〜(-2)的阈值通量后,纳米点开始形成。还可以看出,尽管平均点直径随着通量的增加而增加,但平均点数却随着通量的增加而减小。这种纳米结构特征的形成归因于离子束溅射。离子溅射表面的X射线光电子能谱分析清楚地表明,溅射InP表面富集。在目前的实验条件下,在Ar〜+离子溅射的InP表面上生长纳米点的观察结果与最近基于溅射腐蚀原子模型的模拟结果吻合。

著录项

  • 来源
    《Applied Surface Science》 |2009年第2期|562-566|共5页
  • 作者单位

    Institute of Physics, Ion Beam Lab., Sachivalaya Marg, Bhubaneswar 751 005, India;

    Surface Physics Division, Sana Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064, India;

    Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India;

    Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore;

    Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanodots; InP; ion sputtering;

    机译:纳米点InP;离子溅射;

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