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首页> 外文期刊>Applied Surface Science >Growth of carbon nanotubes on stainless steel substrates by DC-PECVD
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Growth of carbon nanotubes on stainless steel substrates by DC-PECVD

机译：DC-PECVD在不锈钢基底上生长碳纳米管

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摘要

We report on the fabrication of carbon nanotubes (CNTs) on Ni-coated stainless steel (SUS) substrates by using dc plasma enhanced chemical vapor deposition. The synthesized CNTs have the diameter of about 30 nm and the length of about 1.2 μm. To verify the effects of SUS substrates on the growth of CNTs, CNTs had also been grown on Ni-coated Si substrates. CNTs grown on the SUS substrates were more uniform compared with those grown on the Si substrates. Field emission properties of the CNT films were measured in the diode configuration, and the turn-on electric field of 3.87 V/μm and field enhancement factor β of about 1737 were obtained from the synthesized CNTs at the gap of 500 μm between the SUS substrate and the anode. These results have not only clarified the effects of the substrate on the growth of CNTs, but also shown the potential of CNTs in field emission applications, especially CNT-based cold-cathode X-ray tubes.
机译：我们报告了使用直流等离子体增强化学气相沉积技术在镀镍不锈钢（SUS）基底上制造碳纳米管（CNT）的情况。合成的CNT具有约30nm的直径和约1.2μm的长度。为了验证SUS衬底对CNT的生长的影响，CNT也已经在镀Ni的Si衬底上生长。与在Si基板上生长的CNT相比，在SUS基板上生长的CNT更均匀。在二极管结构中测量CNT膜的场发射特性，并且在SUS衬底之间的500μm的间隙处从合成的CNT获得3.87V /μm的开启电场和约1737的场增强因子β。和阳极。这些结果不仅阐明了基材对CNT生长的影响，而且还表明了CNT在场发射应用中的潜力，尤其是基于CNT的冷阴极X射线管。

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  • 来源
    《Applied Surface Science》 |2009年第4期|1065-1068|共4页
  • 作者

    Dao Quang Duy; Hyun Suk Kim; Dang Mo Yoon; Kang Jae Lee; Jung Woong Ha; Yong Gyoo Hwang; Choong Hun Lee; Bach Thanh Cong;

  • 作者单位

    Division of Microelectronics and Display Technology, College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Regional Innovation Center for Next Generation Industrial Radiation Technology, 208 College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Division of Microelectronics and Display Technology, College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Regional Innovation Center for Next Generation Industrial Radiation Technology, 208 College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Division of Microelectronics and Display Technology, College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Division of Microelectronics and Display Technology, College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Division of Microelectronics and Display Technology, College of Natural Sciences, Wonkwang University, Iksan, 344-2 Shinyong Dong, Iksan, Jeonbuk 570-749, Republic of Korea;

    Faculty of Physics, HaNoi University of Science, VietNam National University, 334 Nguyen Trai, Thanh Xuan, HaNoi, VietNam;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    carbon nanotube; DC-PECVD; pretreatment; SUS; field emission;

    机译：碳纳米管DC-PECVD;预处理SUS;场发射;

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