首页> 外国专利> SUBSTRATE FOR GROWTH OF CARBON NANOTUBE, METHOD FOR GROWTH OF CARBON NANOTUBE, METHOD FOR CONTROL OF PATICLE DIAMETER OF CATALYST FOR GROWTH OF CARBON NANOTUBE, AND METHOD FOR CONTROL CARBON NANOTUBE DIAMETER

SUBSTRATE FOR GROWTH OF CARBON NANOTUBE, METHOD FOR GROWTH OF CARBON NANOTUBE, METHOD FOR CONTROL OF PATICLE DIAMETER OF CATALYST FOR GROWTH OF CARBON NANOTUBE, AND METHOD FOR CONTROL CARBON NANOTUBE DIAMETER

机译:碳纳米管生长的基质,碳纳米管生长的方法,控制碳纳米管粒径的方法和控制碳纳米管直径的方法

摘要

A substrate for the growth of a carbon nanotube having a catalyst layer microparticulated by using an arc plasma gun. CNT is grown on the catalyst layer by thermal CVD or remote plasma CVD. The particle diameter of the catalyst for the growth of CNT is regulated by the number of shots of the are plasma gun. CNT is grown on the catalyst layer having a regulated catalyst particle diameter by thermal CVD or remote plasma CVD to regulate the inner diameter or outer diameter of CNT.
机译:用于生长碳纳米管的基板,其具有通过使用电弧等离子体枪而微粒化的催化剂层。 CNT通过热CVD或远程等离子体CVD在催化剂层上生长。用于CNT生长的催化剂的粒径由等离子枪的发射次数来调节。通过热CVD或远程等离子体CVD在具有调节的催化剂粒径的催化剂层上生长CNT,以调节CNT的内径或外径。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号