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首页> 外文期刊>Applied Surface Science >Structural Characterization Of Polycrystalline Ag-in-se Thin Films Deposited By E-beam Technique
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Structural Characterization Of Polycrystalline Ag-in-se Thin Films Deposited By E-beam Technique

机译：电子束技术沉积多晶银在薄膜的结构表征

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The Ag-In-Se thin films were deposited by e-beam evaporation of the Ag_3In_5Se_9 single crystal powder under high vacuum without intentional doping. Energy dispersive X-ray analysis (EDXA) showed the decreasing behavior of Se and Ag in the structure depending on the annealing. X-ray diffraction (XRD) analysis showed that as-grown films have amorphous structure while annealing the films under nitrogen environment at 200 ℃ transformed from the amorphous to polycrystalline structure. The crystallinity of the films improved as annealing temperature increases up to 400 ℃ by 100 ℃-step. The polycrystalline films show mixed binary and ternary crystalline phases. Each phase was determined by comparing XRD patterns with complete data cards as Ag_3In_5Se_9, AgInSe_2, In_4Se_3, In_2Se_3, InSe, Se_6 and Se. The existence of Se segregation was supported by the formation of Se aggregates in crystalline phases of Se_6 and Se. The X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analysis have been carried out in order to obtain detailed information about the atomic composition, chemical states and morphology of the thin film surface. The decomposition of In 4d, Se 3d and Ag 3d photoelectron peaks revealed the existence of In-In, In-Se, In-Ag, Se-Se and Ag-Ag bondings in as-grown thin films. After annealing the thin films at different temperatures, the concentration of In-Se and In-Ag bonds decreases significantly, which results in an In-rich, but Ag- and Se-deficient thin film structure. The roughness of the film surface as a result of application of post-annealing in between 200 and 400 ℃ monitored by AFM technique was observed to change from 1.81 to 22.89 nm.
机译：通过在高真空下无意掺杂的Ag_3In_5Se_9单晶粉末的电子束蒸发来沉积Ag-In-Se薄膜。能量色散X射线分析（EDXA）表明，硒和银在组织中的还原行为取决于退火。 X射线衍射（XRD）分析表明，成膜后的薄膜具有非晶态结构，而在氮气氛下于200℃退火时，薄膜由非晶态转变为多晶结构。薄膜的结晶度随着退火温度升高至100℃至400℃而提高。多晶膜显示出混合的二元和三元结晶相。通过将XRD模式与完整的数据卡（如Ag_3In_5Se_9，AgInSe_2，In_4Se_3，In_2Se_3，InSe，Se_6和Se）进行比较来确定每个阶段。在Se_6和Se的结晶相中Se聚集体的形成支持了Se偏析的存在。为了获得有关薄膜表面的原子组成，化学状态和形态的详细信息，已经进行了X射线光电子能谱（XPS）和原子力显微镜（AFM）分析。 In 4d，Se 3d和Ag 3d光电子峰的分解表明，成膜的薄膜中存在In-In，In-Se，In-Ag，Se-Se和Ag-Ag键。在不同温度下对薄膜进行退火之后，In-Se和In-Ag键的浓度会显着降低，这将导致In含量丰富，但Ag和Se含量不足。通过AFM技术监测的在200至400℃之间进行后退火的结果是，膜表面的粗糙度在1.81至22.89nm之间变化。

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