• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Indium Zinc Oxide Thin Films Deposited By Sputtering At Room Temperature
【24h】

Indium Zinc Oxide Thin Films Deposited By Sputtering At Room Temperature

机译：室温溅射沉积的氧化铟锌薄膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10~(14) and 3 x 1020 cm"3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ～ 0.7 could be controlled between 5 × 10~(-3) and 10~4 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm~2 V~1 s~1The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.
机译：研究了在室温下从单个靶材通过溅射在n型载流子浓度在10〜（14）和3 x 1020 cm“ 3的玻璃基板上沉积非晶态铟锌氧化物（IZO）薄膜与功率和功率的关系。通过改变沉积过程中的功率，可以将In / Zn为0.7的薄膜的电阻率控制在5×10〜（-3）和10〜4Ωcm之间，相应的电子迁移率为4-18 cm〜。在2 V〜1 s〜1的条件下，对于200 nm的膜厚，在所有条件下表面均方根粗糙度均小于1 nm，在这些IZO层上制造了栅极长度为1μm的薄膜晶体管，显示了良好的增强模式操作截止特性，2.5 V的阈值电压和6 mS / mm的最大跨导，这些膜在透明薄膜晶体管应用中看起来很有希望。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号