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Relative Roles Of Acetic Acid, Dodecyl Sulfate And Benzotriazole In Chemical Mechanical And Electrochemical Mechanical Planarization Of Copper

机译:乙酸,十二烷基硫酸盐和苯并三唑在铜化学机械和电化学机械平面化中的相对作用

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The efficiency of chemical mechanical or electrochemical mechanical planarization (CMP or ECMP) carried out in the fabrication of integrated circuits is largely governed by the functional chemicals used in these processes. In this work, we study the individual and combined chemical and electrochemical effects of a selected set of such chemicals that can potentially support both CMP and ECMP of copper. These chemicals include acetic acid (HAc) as a complexing agent, H2O2 as an oxidizer, and ammonium dodecyl sulfate (ADS) as a dissolution inhibitor. Surface passivating effects of ADS under both CMP (open circuit) and ECMP (voltage activated) conditions are compared with those of a standard dissolution inhibitor for Cu, benzotriazole (BTAH), and the combined effects of a BTAH-ADS mixture also are explored. The experiments are performed in the absence of mechanical polishing using static and rotating Cu disc electrodes, and electro-dissolution of Cu for ECMP is activated using a voltage pulse modulation technique. A mechanism of surface reactions is proposed to describe the relative roles of HAc, H2O2, ADS and BTAH as electrolyte components for CMP and ECMP of Cu.
机译:在集成电路制造中进行的化学机械或电化学机械平坦化(CMP或ECMP)的效率在很大程度上受这些过程中使用的功能化学品的支配。在这项工作中,我们研究了一组可能同时支持铜的CMP和ECMP的此类化学物质的单独和综合化学和电化学作用。这些化学物质包括乙酸(HAc)作为络合剂,H2O2作为氧化剂和十二烷基硫酸铵(ADS)作为溶解抑制剂。将ADS在CMP(开路)和ECMP(电压激活)条件下的表面钝化效果与标准的铜,苯并三唑(BTAH)溶解抑制剂的表面钝化效果进行了比较,还探讨了BTAH-ADS混合物的组合钝化效果。在没有使用静态和旋转铜盘电极进行机械抛光的情况下进行实验,并使用电压脉冲调制技术激活用于ECMP的铜的电溶解。提出了一种表面反应机理来描述HAc,H2O2,ADS和BTAH作为Cu的CMP和ECMP电解质组分的相对作用。

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