• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Effects Of Rf Power On Surface-morphological, Structural And Electrical Properties Of Aluminium-doped Zinc Oxide Films By Magnetron Sputtering
【24h】

Effects Of Rf Power On Surface-morphological, Structural And Electrical Properties Of Aluminium-doped Zinc Oxide Films By Magnetron Sputtering

机译：射频功率对磁控溅射铝掺杂氧化锌薄膜表面形貌，结构和电性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Aluminium-doped zinc oxide (ZnO:Al) films were prepared by magnetron sputtering at different radio-frequency powers (P_(rf)) of 50, 100, 150 and 200 W. The properties of the films were characterised by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Raman microscopy, and spectrophotometry with the emphasis on the evolution of compositional, surface-morphological, optical, electrical and microstructural properties. XPS spectra showed that within the detection limit the films are chemically identical to near-stoichiometric ZnO. AFM revealed that root-mean-square roughness of the films has almost linear increase with increasing P_(rf). Optical band gap E_(gopt) of the films increases from 3.31 to 3.51 eV when P_(rf) increases from 50 to 200 W. A widening E_(gopt) of the ZnO: Al films compared to the band gap (～3.29 eV)of undoped ZnO films is attributed to a net result of the competition between the Burstein-Moss effect and many-body effects. An electron concentration in the films was calculated in the range of 3.73 × 10~(19) to 2.12 × 10~(20) cm~(-3). Raman spectroscopy analysis indicated that well-identified peaks appear at around 439 cm~(-1) for all samples, corresponding to the band characteristics of the wurtzite phase. Raman peaks in the range 573-579 cm~(-1) are also observed, corresponding to the A_1 (LO) mode of ZnO.
机译：通过磁控溅射以50、100、150和200 W的不同射频功率（P_（rf））制备铝掺杂的氧化锌（ZnO：Al）薄膜。通过X射线光电子表征薄膜的性能光谱学（XPS），原子力显微镜（AFM），拉曼显微镜和分光光度法，重点是成分，表面形态，光学，电学和微观结构性质的演变。 XPS光谱表明，在检出限内，该膜与接近化学计量的ZnO在化学上相同。原子力显微镜显示，薄膜的均方根粗糙度随着P_（rf）的增加几乎呈线性增加。当P_（rf）从50 W增加到200 W时，薄膜的光学带隙E_（gopt）从3.31 eV增加到3.51 eV。ZnO：Al薄膜的E_（gopt）与带隙（〜3.29 eV）相比变宽未掺杂的ZnO薄膜的大量归因于Burstein-Moss效应和多体效应之间竞争的净结果。计算出膜中的电子浓度为3.73×10〜（19）至2.12×10〜（20）cm〜（-3）。拉曼光谱分析表明，所有样品均在439 cm〜（-1）附近出现峰，这与纤锌矿相的能带特征相对应。还观察到拉曼峰在573-579 cm〜（-1）范围内，与ZnO的A_1（LO）模式相对应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号