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Structural Analysis Of In/ag, In/cu And In/pd Thin Films On Tungsten By Ellipsometric, Xrd And Aes Methods

机译:椭偏,Xrd和Aes方法在钨上In / ag,In / cu和In / pd薄膜的结构分析

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摘要

Compositional, microstructural and optical properties of In/Cu, In/Ag and In/Pd thin films evaporated on W substrate in a vacuum were investigated by means of Auger electron spectroscopy, X-ray diffractometry, scanning electron microscopy, and spectroscopic ellipsometry methods. Thicknesses of deposited pure metal layers were adjusted to atomic concentration ratios In:Ag = 1:2, In:Cu = 2:1 and In:Pd = 3:1. Interdiffusion of metals and creation of intermetallic compounds AgIn_2, Ag_2In and CuIn_2 were detected at room temperature. Phase transformation and changes in the surface morphology due to annealing of samples at 393 K for 60 min were revealed. Combined investigations indicated a layered structure of In/Ag films. A tendency of island-like structure formation was stronger for In/Cu and In/Pd films. The complex dielectric functions <∈(E) > = <∈_1(E)> + i<∈_2(E)> of In/Ag, In/Cu and In/Pd composite layers were determined from spectroellipsometric data.
机译:通过俄歇电子能谱,X射线衍射,扫描电子显微镜和椭圆偏振光谱法研究了在W衬底上真空蒸发的In / Cu,In / Ag和In / Pd薄膜的组成,微观结构和光学性质。将沉积的纯金属层的厚度调整为原子浓度比In:Ag = 1:2,In:Cu = 2:1和In:Pd = 3:1。在室温下检测到金属的相互扩散和金属间化合物AgIn_2,Ag_2In和CuIn_2的生成。揭示了由于样品在393 K下退火60分钟而引起的相变和表面形态变化。联合研究表明In / Ag薄膜呈层状结构。对于In / Cu和In / Pd膜,岛状结构形成的趋势更强。 In / Ag,In / Cu和In / Pd复合层的复介电函数<ε(E)> = <ε_1(E)> + i <ε_2(E)>由分光光度法数据确定。

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