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Synthesis Of Gan Nanowires By Tb Catalysis

机译:Tb催化合成Gan纳米线

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摘要

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga_2O_3/Tb films sputtered on Si(111) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.
机译:稀土金属种子Tb被用作GaN线生长的催化剂。通过氨化溅射在Si(111)衬底上的Ga_2O_3 / Tb薄膜成功合成了GaN纳米线。通过X射线衍射和傅立叶变换红外光谱表征的样品表明,纳米线由六方纤锌矿GaN构成。扫描电子显微镜,透射电子显微镜和高分辨率透射电子显微镜显示样品是单晶GaN纳米线结构。讨论了GaN纳米线的生长机理。

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