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首页> 外文期刊>Applied Surface Science >Application Of Spectroscopic Photoemission And Low Energy Electron Microscope To High-k Gate Dielectrics: Relationship Between Surface Morphology And Electronic States During Hf-silicide Formation
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Application Of Spectroscopic Photoemission And Low Energy Electron Microscope To High-k Gate Dielectrics: Relationship Between Surface Morphology And Electronic States During Hf-silicide Formation

机译：光谱光发射和低能电子显微镜在高k栅极介电材料中的应用：Hf硅化物形成过程中表面形态与电子态之间的关系

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We have applied the spectroscopic photoemission and low energy electron microscope to study high-k gate dielectrics and have performed the following in situ operations during ultranigh vacuum annealing: real-time observation of surface morphology and microregion photoelectron spectroscopy measurements. Changes in surface morphology and electronic states were consistent with the models previously reported in the case of HfO_2/Si. No clear differences between void regions and nonvoid regions have been observed in microregion photoelectron spectra for poly-Si/ HfCVSi, regardless of phase separation in real space. These results have suggested that the initial void formation occurs in about 100-nm wide regions for both HfO_2/Si and poly-Si/HfO_2/Si.
机译：我们已经使用光谱光发射和低能电子显微镜研究高k栅极电介质，并在超真空退火过程中执行了以下原位操作：实时观察表面形态和微区光电子能谱测量。表面形态和电子态的变化与先前报道的HfO_2 / Si的模型一致。在多晶硅-HfCVSi的微区光电子光谱中，未观察到空隙区和非空隙区之间没有明显的差异，而与实际空间中的相分离无关。这些结果表明，对于HfO_2 / Si和多晶硅-HfO_2 / Si，初始空隙形成均发生在约100 nm宽的区域中。

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