Study Of Structural And Electronic Environments Of Hydrogenated Amorphous Silicon Carbonitride (a-sicn:h) Films Deposited By Hot Wire Chemical Vapor Deposition

Bibhu P. Swain; Nong M. Hwang

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Study Of Structural And Electronic Environments Of Hydrogenated Amorphous Silicon Carbonitride (a-sicn:h) Films Deposited By Hot Wire Chemical Vapor Deposition

机译：热丝化学气相沉积沉积氢化非晶碳氮化硅（a-sicn：h）膜的结构和电子环境的研究

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Hydrogenated amorphous silicon carbon nitride (a-SiCN:H) thin films were deposited by hot wire chemical vapor deposition (HWCVD) using SiH_4, CH_4, NH_3 and H_2 as precursors. The effects of the H_2 dilution on structural and chemical bonding of a-SiCN:H has been investigated by Raman and X-ray photoelectron spectroscopy (XPS). Increasing the H_2 flow rate in the precursor gas more carbon is introduced into the a-SiCN:H network resulting in decrease of silicon content in the film from 41 at.% to 28.8 at.% and sp~2 carbon cluster increases when H_2 flow rate is increased from 0 to 20 sccm.

机译：使用SiH_4，CH_4，NH_3和H_2作为前体，通过热线化学气相沉积（HWCVD）沉积氢化非晶硅碳氮化物（a-SiCN：H）薄膜。通过拉曼光谱和X射线光电子能谱（XPS）研究了H_2稀释对a-SiCN：H的结构和化学键合的影响。增加前驱气体中的H_2流速，更多的碳被引入a-SiCN：H网络，导致薄膜中的硅含量从41 at。％减少到28.8 at。％，并且当H_2流动时，sp〜2碳簇增加速率从0增加到20 sccm。

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来源
《Applied Surface Science》 |2008年第17期|p.5319-5322|共4页
作者
Bibhu P. Swain; Nong M. Hwang;
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作者单位

National Research Laboratory of Charged Nanoparticles, School of Materials Science and Engineering, Seoul National University, Seoul, South Korea;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
a-sicn:h; xps; raman spectroscopy;

机译：a-sicn：h;xps;拉曼光谱;

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Study Of Structural And Electronic Environments Of Hydrogenated Amorphous Silicon Carbonitride (a-sicn:h) Films Deposited By Hot Wire Chemical Vapor Deposition

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