Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition

机译：螺旋波等离子体化学气相沉积法沉积氢化非晶硅氮化硅薄膜的光致发光特性

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Hydrogenated amorphous silicon nitride (a-SiN_x:H) thin films are deposited by helicon wave plasma chemical vapor deposition technique. The structural and photoluminescence properties of these films have been characterized by X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and ultraviolet-visible (UV-VIS) spectroscopy. It is shown that the silicon atom bonds exist in the Si-Si and Si-N configurations and the amorphous silicon regions appear separately in the Si-rich a-SiN_x films. All the PL spectra of the deposited films manifest itself as several interference peaks superposed on an energy-dependent Gaussian distributed band. The PL and absorption results of the deposited films with different nitrogen content support that the luminescence of the Si-rich a-SiN_x:H films is related to the photo-excited carriers radiation process in the separated amorphous silicon potential well region, while the blue shift of PL main peaks and the enlargement of PL intensity with increase nitrogen content are ascribed to the size reduction of amorphous silicon separated regions and the enhancement of confinement effect.

机译：通过螺旋波等离子体化学气相沉积技术沉积氢化非晶硅氮化物（a-SiN_x：H）薄膜。这些膜的结构和光致发光特性已通过X射线光电子能谱（XPS），光致发光（PL）和紫外可见（UV-VIS）光谱进行了表征。结果表明，硅原子键以Si-Si和Si-N构型存在，非晶硅区域在富Si的a-SiN_x膜中分开出现。沉积膜的所有PL光谱都显示为几个干扰峰，它们叠加在依赖于能量的高斯分布带上。具有不同氮含量的沉积膜的PL和吸收结果表明，富Si的a-SiN_x：H膜的发光与分离的非晶硅势阱区域中的光激发载流子辐射过程有关，而蓝色PL主峰的偏移和PL强度随氮含量的增加而增大，这归因于非晶硅分离区的尺寸减小和约束效应的增强。

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《Optoelectronic Materials and Devices for Optical Communications》|2005年|P.60203E.1-60203E.5|共5页
会议地点 Shanghai(CN)
作者
Guangsheng Fu; Wei Yu; Wanbing Lu; Haifeng Zhu; Li Zhang; Wenge Ding;
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作者单位

College of Physics Science Technology, Hebei University, Baoding, 071002, Hebei province, People's Republic of China;

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原文格式 PDF
正文语种 eng
中图分类光电子技术的应用;
关键词
helicon wave plasma chemical vapor deposition; separated amorphous silicon; photoluminescence;

机译：螺线波等离子体化学气相沉积；分离的非晶硅；光致发光;

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4. Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition [C] . Guangsheng Fu, Wei Yu, Wanbing Lu, Conference on Optoelectronic Materials and Devices for Optical Communications . 2005

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5. Nanocrystalline and amorphous silicon thin film transistors deposited by microwave plasma electron cyclotron resonance chemical vapor deposition: Material analysis, device fabrication and characterization. [D] . Teng, Lihong. 2003

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6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

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7. Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition [O] . Shiguo Yang, Guozhi Wen, Yang Luo, 2016

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8. Growth of Silicon Nitride Crystalline Films Using Microwave Plasma EnhancedChemical Vapor Deposition [R] . Grannen, K. J., Xiong, F., Chang, R. P. 1994

机译：微波等离子体增强化学气相沉积法制备氮化硅晶体薄膜

Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition

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