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首页> 外文期刊>Applied Surface Science >In Situ Endpoint Detection Of Reactive Ion-beam Etching Of Dielectric Gratings With An Etch-stop Layer Using Downstream Mass Spectrometry
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In Situ Endpoint Detection Of Reactive Ion-beam Etching Of Dielectric Gratings With An Etch-stop Layer Using Downstream Mass Spectrometry

机译：下游质谱法对带有腐蚀停止层的电介质光栅的反应性离子束腐蚀进行原位终点检测

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摘要

Downstream mass spectrometry is successfully used in the reactive ion-beam etching of dielectric diffraction gratings of deep grooves with vertical sidewalls to achieve in situ endpoint detection. Silica (SiO_2) gratings with a Sc_2O_3 etch-stop layer are fabricated by reactive ion-beam etching with CHF_3 as etchant, and the mass spectrometric signal of SiF_3~+ produced by the reactive etching of the SiO_2 grating material is monitored. When the etch-stop layer is reached, a drop of this signal occurs. By comparing the monitoring curves and resulting gratings of different etching methods, we find that the decrease of the monitored signal is strongly influenced by the sidewall steepness of the etched grating grooves. All conditions being equal, the greater sidewall steepness renders the faster decrease of the signal. Consequently, the proposed approach of endpoint detection applies well to the gratings with steep sidewalls. With the help of two previously developed methods, the sidewall steepness of grating grooves is increased, and the optimal endpoint is detected. Employing the proposed technique, we have reproducibly fabricated dielectric gratings with proper groove depth and even groove bottom.
机译：下游质谱法已成功用于具有垂直侧壁的深槽介电衍射光栅的反应性离子束蚀刻，以实现原位终点检测。通过以CHF_3为刻蚀剂的反应离子束刻蚀工艺制备了具有Sc_2O_3刻蚀停止层的二氧化硅（SiO_2）光栅，并监测了通过SiO_2光栅材料的反应刻蚀产生的SiF_3〜+的质谱信号。当到达蚀刻停止层时，该信号下降。通过比较不同蚀刻方法的监测曲线和所得光栅，我们发现所监测信号的减少受蚀刻光栅沟槽的侧壁陡度影响很大。在所有条件相同的情况下，较大的侧壁陡度使信号衰减更快。因此，所提出的端点检测方法很好地适用于具有陡峭侧壁的光栅。借助两种先前开发的方法，可以增加光栅凹槽的侧壁陡度，并检测出最佳终点。利用所提出的技术，我们可重复制造具有适当凹槽深度和均匀凹槽底部的介电光栅。

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