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首页> 外文期刊>Applied Surface Science >Epitaxial growth La_(0.67)Ca_(0.33)MnO_3 thin film by radio frequency sputtering method
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Epitaxial growth La_(0.67)Ca_(0.33)MnO_3 thin film by radio frequency sputtering method

机译：射频溅射法外延生长La_（0.67）Ca_（0.33）MnO_3薄膜

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摘要

Perfect epitaxial growth of La_(0.67)Ca_(0.33)MnO_3 (LCMO) thin film has been achieved on (100) LaAlO_3 (LAO) single crystal substrate by radio frequency sputtering method. X-ray diffraction (XRD) and electron diffraction analysis indicates that La_(0.67)Ca_(0.33)MnO_3 film grows epitaxially on LaAlO_3 along [100] direction of the substrate. The resistivity variation with temperature of the film shows a sharp metal to semiconductor transition peak around 253 K, which is close to that of the target. The magnetoresistance (MR) also reveals high quality epitaxy film characteristic at low temperatures and near the metal to semiconductor transition temperature.
机译：通过射频溅射法在（100）LaAlO_3（LAO）单晶衬底上实现了La_（0.67）Ca_（0.33）MnO_3（LCMO）薄膜的完美外延生长。 X射线衍射（XRD）和电子衍射分析表明，La_（0.67）Ca_（0.33）MnO_3膜在LaAlO_3上沿衬底的[100]方向外延生长。薄膜的电阻率随温度的变化在253 K附近显示出一个陡峭的金属-半导体跃迁峰，该峰接近于目标。磁阻（MR）还在低温和接近金属到半导体的转变温度时显示出高质量的外延膜特性。

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