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Influence Of Surface Cleaning Effects On Properties Of Schottky Diodes On 4h-sic

机译：表面清洁效应对4h-sic上肖特基二极管性能的影响

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摘要

Ir/4H-SiC and IrO_2/4H-SiC Schottky diodes are reported in terms of different methods of surface pretreatment before contact deposition. In order to find the effect of surface preparation processes on Schottky characteristics the SiC wafers were respectively cleaned using the following processes: (1) RCA method followed by buffered HF dip. Next, the surface was oxidized (5.5 nm oxide) using a rapid thermal processing reactor chamber and circular geometry windows were opened in the oxide layer before metallization deposition; (2) the same as sequence (1) but with an additional in situ sputter etching step before metallization deposition; (3) cleaning in organic solvents followed by buffered HF dip. The I-V characteristics of Schottky diodes were analyzed to find a correlation between extracted parameters and surface treatment. The best results were obtained for the sequence (1) taking into account theoretical value of Schottky barrier height. The contacts showed excellent Schottky behavior with ideality factors below 1.08 and barrier heights of 1.46 eV and 1.64 eV for Ir and IrO_2, respectively. Very promising results were obtained for samples prepared using the sequence (2) taking into account the total static power losses because the modified surface preparation results in a decrease in the forward voltage drop and reverse leakage current simultaneously. The contacts with ideality factor below 1.09 and barrier height of 1.02 eV were fabricated for Ir/4H-SiC diodes in sequence (2).
机译：根据接触沉积前表面预处理的不同方法，报道了Ir / 4H-SiC和IrO_2 / 4H-SiC肖特基二极管。为了找到表面处理工艺对肖特基特性的影响，分别使用以下工艺清洁了SiC晶片：（1）RCA方法，然后进行缓冲HF浸渍。接下来，使用快速热处理反应器腔室对表面进行氧化（5.5 nm氧化物），并在金属化沉积之前在氧化物层中打开圆形几何窗口； （2）与顺序（1）相同，但是在金属化沉积之前具有附加的原位溅射蚀刻步骤； （3）在有机溶剂中清洗，然后进行缓冲的HF浸洗。分析了肖特基二极管的I-V特性，以发现提取的参数与表面处理之间的相关性。考虑到肖特基势垒高度的理论值，对于序列（1）可获得最佳结果。接触表现出优异的肖特基行为，理想因子低于1.08，Ir和IrO_2的势垒高度分别为1.46 eV和1.64 eV。考虑到总的静态功率损耗，使用序列（2）制备的样品获得了非常有希望的结果，因为经过改进的表面制备会同时降低正向压降和反向漏电流。依序（2）为Ir / 4H-SiC二极管制造了理想因数低于1.09和势垒高度为1.02 eV的触点。

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