首页> 外文期刊>Applied Surface Science >Critical Distance For Secondary Ion Formation: Experimental Sims Measurements
【24h】

Critical Distance For Secondary Ion Formation: Experimental Sims Measurements

机译:二次离子形成的临界距离:实验模拟测量

获取原文
获取原文并翻译 | 示例
           

摘要

We have performed direct experimental measurements of the critical distance for the secondary ion formation process. To this end, we compared the experimentally measured energy distribution of secondary Si~- ions with the theoretical energy distribution (Sigmund-Thompson relation) of secondary Si atoms. Our model states that the maxima positions of these two energy distributions differ by the Coulomb interaction potential between the outgoing ion (Si~- in our case) and a charge with the opposite polarity formed at the surface after electron transition between the outgoing Si atom and the surface. Quite a reasonable value was obtained for the critical distance, but with a large scatter in experimental data. The conclusion has been made that the experimental technique should be improved to get more precise values of the critical distance, which is of high importance for practical purposes.
机译:我们已经进行了二次离子形成过程的临界距离的直接实验测量。为此,我们将实验测量的次生Si离子的能量分布与次生Si原子的理论能量分布(Sigmund-Thompson关系)进行了比较。我们的模型指出,这两种能量分布的最大位置因输出离子(在我们的情况下为Si〜-)与在输出的Si原子与电子之间跃迁后在表面形成的极性相反的电荷之间的库仑相互作用势而不同。表面。对于临界距离,获得了相当合理的值,但是在实验数据中具有很大的分散性。得出的结论是,应改进实验技术以获取更精确的临界距离值,这对于实际应用而言非常重要。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号