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首页> 外文期刊>Applied Surface Science >Influence Of Primary Ion Beam Irradiation Conditions On The Depth Profile Of Hydrogen In Tantalum Film
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Influence Of Primary Ion Beam Irradiation Conditions On The Depth Profile Of Hydrogen In Tantalum Film

机译：一次离子束辐照条件对钽膜中氢深度分布的影响

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摘要

In order to confirm the possibility that hydrogen in Ta film migrates during SIMS measurement, the influence of primary ion beam irradiation conditions on the depth profile of hydrogen in a Ta film was investigated. Deuterium implanted in a Ta_2O_5/Ta/Ta_2O_5 structure was analyzed using Cs~+ irradiation interruption. The result shows that hydrogen was discharged from the Ta film to the vacuum of the sample chamber during SIMS measurements with a Cs~+ ion beam. The deuterium profile of the Ta film analyzed with an O_2~+ primary ion beam differed from those with Cs~+ or Ar~+ irradiations, and it depended on the incidence angle of the O_2~+ beam. According to these results, we propose a model where the hydrogen is discharged from Ta films to the vacuum of the sample chamber when Ta_2O_5 film is removed with Cs~+ or Ar~+ beam irradiation, but the hydrogen is not discharged when Ta_2O_5 film is formed on the Ta surface using O_2~+ primary beam irradiation.
机译：为了确定在SIMS测量过程中Ta膜中氢迁移的可能性，研究了一次离子束辐照条件对Ta膜中氢深度分布的影响。使用Cs〜+辐照中断分析了植入Ta_2O_5 / Ta / Ta_2O_5结构中的氘。结果表明，在用Cs〜+离子束进行SIMS测量期间，氢从Ta膜释放到样品室的真空中。用O_2〜+一次离子束分析的Ta薄膜的氘分布与Cs〜+或Ar〜+辐照的氘分布不同，这取决于O_2〜+束的入射角。根据这些结果，我们提出了一个模型，其中当用Cs〜+或Ar〜+束辐照去除Ta_2O_5膜时，氢从Ta膜释放到样品室的真空中，而当Ta_2O_5膜被氢去除时，氢不排放。 O_2〜+一次束辐照在Ta表面形成。

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